J111
MOSFET. Datasheet pdf. Equivalent
Type Designator: J111
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 0.05
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 3
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 30
Ohm
Package:
TO92
J111
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J111
Datasheet (PDF)
..1. Size:31K philips
j111 j112 j113 cnv.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETJ111; J112; J113N-channel silicon field-effecttransistorsJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J111; J112; J113DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapp
..2. Size:488K fairchild semi
j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf
J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D
..3. Size:52K vishay
j111 j112 j113 sst111 sst112 sst113.pdf
J/SST111 SeriesVishay SiliconixN-Channel JFETsJ111 SST111J112 SST112J113 SST113PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST111 3 to 10 30 5 4J/SST112 1 to 5 50 5 4J/SST113 v3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 111
..4. Size:85K onsemi
j111 j112.pdf
J111, J112JFET Chopper TransistorsN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Gate Voltage VDG -35 VdcGATEGate -Source Voltage VGS -35 VdcGate Current IG 50 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/CLead Temperature TL 300
0.1. Size:32K philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
0.2. Size:47K philips
pmbfj111 pmbfj112 pmbfj113.pdf
PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
0.3. Size:255K toshiba
ssm3j111tu.pdf
SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source vol
0.4. Size:151K fairchild semi
mmbfj111 mmbfj112 mmbfj113.pdf
August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark
Datasheet: IXTZ35N25MB
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, IXTZ67N10MB
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