J111 MOSFET. Datasheet pdf. Equivalent

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J111 Datasheet (PDF)

0.1. j111 j112 j113 cnv.pdf Size:31K _philips

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for app

0.2. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 Ω for PMBFJ111). 1.3 Applications Analog switches Choppers

 0.3. pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf Size:32K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES • High-speed switching • Interchangeability of drain and source connections 3 handbook, halfpage • Low

0.4. ssm3j111tu.pdf Size:255K _toshiba

SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm • 2.5V drive 2.1±0.1 • Low on-resistance: Ron = 480mΩ (max) (@VGS = -4 V) 1.7±0.1 Ron = 680mΩ (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25°C) 1 3 2 Characteristic Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source vol

 0.5. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _fairchild_semi

August 2012 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable. MMBFJ111 J111 MMBFJ112 J112 MMBFJ112_SB51338 J113 MMBFJ113 G S SOT-23 G TO-92 Mark

0.6. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi

J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG D

0.7. j111 j112 j113 sst111 sst112 sst113.pdf Size:52K _vishay

J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast Switching—tON: 4 ns

0.8. j111 j112.pdf Size:85K _onsemi

J111, J112 JFET Chopper Transistors N-Channel — Depletion Features http://onsemi.com • Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25°C PD 350 mW Derate above = 25°C 2.8 mW/°C Lead Temperature TL 300

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