All MOSFET. J111 Datasheet

 

J111 MOSFET. Datasheet pdf. Equivalent

Type Designator: J111

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 35 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 3 pF

Maximum Drain-Source On-State Resistance (Rds): 30 Ohm

Package: TO92

J111 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

J111 Datasheet (PDF)

1.1. j111_j112_j113_cnv.pdf Size:31K _philips

J111
J111

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applic

1.2. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

J111
J111

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Comm

1.3. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

J111
J111

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at

1.4. ssm3j111tu.pdf Size:255K _toshiba

J111
J111

SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m? (max) (@VGS = -4 V) 1.70.1 Ron = 680m? (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 1 3 2 Characteristic Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS 12

1.5. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J111
J111

J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain

1.6. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J111
J111

J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed An

1.7. j111_j112.pdf Size:85K _onsemi

J111
J111

J111, J112 JFET Chopper Transistors N-Channel Depletion Features http://onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above = 25C 2.8 mW/C Lead Temperature TL 300 C Operat

Datasheet: IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , IRF3710 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 .

 


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