All MOSFET. J112 Datasheet

 

J112 MOSFET. Datasheet pdf. Equivalent

Type Designator: J112

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 35 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 3 pF

Maximum Drain-Source On-State Resistance (Rds): 30 Ohm

Package: TO92

J112 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

J112 PDF doc:

1.1. j112rev0.pdf Size:110K _motorola

J112
J112

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by J112/D JFET Chopper Transistor N–Channel — Depletion 1 DRAIN J112 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 Drain–Gate Voltage VDG –35 Vdc 2 3 Gate–Source Voltage VGS –35 Vdc CASE 29–04, STYLE 5 Gate Current IG 50 mAdc TO–92 (TO–226AA) Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C

1.2. j112.pdf Size:110K _motorola

J112
J112

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by J112/D JFET Chopper Transistor N–Channel — Depletion 1 DRAIN J112 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 Drain–Gate Voltage VDG –35 Vdc 2 3 Gate–Source Voltage VGS –35 Vdc CASE 29–04, STYLE 5 Gate Current IG 50 mAdc TO–92 (TO–226AA) Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C

1.3. j111_j112_j113_cnv.pdf Size:31K _philips

J112
J112

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applic

1.4. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

J112
J112

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Comm

1.5. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

J112
J112

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES • High-speed switching • Interchangeability of drain and source connections 3 handbook, halfpage • Low RDSon at

1.6. ssm3j112tu.pdf Size:136K _toshiba

J112
J112

SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit: mm • 4V drive 2.1±0.1 • Low on-resistance: Ron = 790m? (max) (@VGS = -4 V) 1.7±0.1 Ron = 390m? (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25°C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -30 V Gate-Source voltage VGSS ± 20 V

1.7. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J112
J112

J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain

1.8. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J112
J112

J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast Switching—tON: 4 ns D High-Speed An

1.9. j111_j112.pdf Size:85K _onsemi

J112
J112

J111, J112 JFET Chopper Transistors N-Channel — Depletion Features http://onsemi.com • Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25°C PD 350 mW Derate above = 25°C 2.8 mW/°C Lead Temperature TL 300 °C Operat

1.10. hj112.pdf Size:58K _hsmc

J112
J112

Spec. No. : HE6030 HI-SINCERITY Issued Date : 1998.07.01 Revised Date : 2005.07.14 MICROELECTRONICS CORP. Page No. : 1/5 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. TO-252 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ..............................

Datasheet: IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , J111 , IRFZ34N , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 .

 


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