J112 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by J112/D JFET Chopper Transistor N Channel Depletion 1 DRAIN J112 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 Drain Gate Voltage VDG 35 Vdc 2 3 Gate Source Voltage VGS 35 Vdc CASE 29 04, STYLE 5 Gate Current IG 50 mAdc TO 92 (TO 226AA) Total Device Dissipation @ TA = 25 C PD 350

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for app

J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark 6P / 6R / 6S NOTE Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VDG D

J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v 3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 111

J111, J112 JFET Chopper Transistors N-Channel Depletion Features http //onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25 C PD 350 mW Derate above = 25 C 2.8 mW/ C Lead Temperature TL 300

J111, J112 JFET Chopper Transistors N-Channel Depletion Features http //onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25 C PD 350 mW Derate above = 25 C 2.8 mW/ C Lead Temperature TL 300

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit mm 4V drive 2.1 0.1 Low on-resistance Ron = 790m (max) (@VGS = -4 V) 1.7 0.1 Ron = 390m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -30 V Gate-Source volta

August 2012 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable. MMBFJ111 J111 MMBFJ112 J112 MMBFJ112_SB51338 J113 MMBFJ113 G S SOT-23 G TO-92 Mark

Spec. No. HE6030 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/5 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ...........................