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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr... See More ⇒

J108/J109/J110/MMBFJ108 N-Channel Switch 3 This device is designed for digital switching applications where very low on resistance is mandatory. 2 Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25... See More ⇒

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate volt... See More ⇒

PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (... See More ⇒

SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU Power Management Switch Applications High-Speed Switching Applications Unit mm 1.8 V drive 2.1 0.1 Low ON-resistance Ron = 300 m (max) (@VGS = -1.8 V) 1.7 0.1 Ron = 172 m (max) (@VGS = -2.5 V) Ron = 130 m (max) (@VGS = -4.0 V) 1 Absolute Maximum Ratings (Ta = 25 ... See More ⇒

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