All MOSFET. J109 Datasheet

 

J109 MOSFET. Datasheet pdf. Equivalent

Type Designator: J109

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Drain Current |Id|: 0.04 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 15 pF

Maximum Drain-Source On-State Resistance (Rds): 12 Ohm

Package: TO92

J109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

J109 Datasheet (PDF)

0.1. pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf Size:32K _philips

J109
J109

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt

0.2. j108 j109 j110 1.pdf Size:45K _philips

J109
J109

DISCRETE SEMICONDUCTORSDATA SHEETJ108; J109; J110N-channel silicon junction FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction FETs J108; J109; J110FEATURES PINNING - TO-92 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

 0.3. pmbfj108 pmbfj109 pmbfj110.pdf Size:46K _philips

J109
J109

PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

0.4. j108-j109-j110.pdf Size:34K _philips

J109
J109

DISCRETE SEMICONDUCTORSDATA SHEETJ108; J109; J110N-channel silicon junction FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction FETs J108; J109; J110FEATURES PINNING - TO-92 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

 0.5. 2sj109.pdf Size:242K _toshiba

J109
J109

0.6. ssm3j109tu.pdf Size:205K _toshiba

J109
J109

SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8 V drive 2.10.1 Low ON-resistance: Ron = 300 m (max) (@VGS = -1.8 V) 1.70.1Ron = 172 m (max) (@VGS = -2.5 V) Ron = 130 m (max) (@VGS = -4.0 V) 1Absolute Maximum Ratings (Ta = 25

0.7. j108 j109 j110 mmbfj108.pdf Size:129K _fairchild_semi

J109
J109

J108/J109/J110/MMBFJ108N-Channel Switch3 This device is designed for digital switching applications where very low on resistance is mandatory.2 Sourced from Process 58.TO-921 SuperSOT-31Marking: I81. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25

0.8. j108 j109 j110 sst108 sst109 sst110.pdf Size:50K _vishay

J109
J109

J/SST108 SeriesVishay SiliconixNChannel JFETsJ108 SST108J109 SST109J110 SST110PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST108 3 to 10 8 20 4J/SST109 2 to 6 12 20 4J/SST110 0.5 to 4 18 20 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J108

0.9. 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf Size:150K _no

J109

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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