All MOSFET. J109 Datasheet

 

J109 MOSFET. Datasheet pdf. Equivalent

Type Designator: J109

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Drain Current |Id|: 0.04 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 15 pF

Maximum Drain-Source On-State Resistance (Rds): 12 Ohm

Package: TO92

J109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

J109 Datasheet (PDF)

1.1. j108_j109_j110_1.pdf Size:45K _philips

J109
J109

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and

1.2. j108-j109-j110.pdf Size:34K _philips

J109
J109

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and

1.3. pmbfj108_pmbfj109_pmbfj110_cnv_2.pdf Size:32K _philips2

J109
J109

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage ( <

1.4. pmbfj108_pmbfj109_pmbfj110.pdf Size:46K _philips2

J109
J109

PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 8 ? for PMBFJ108). 1.3 Applications Analog switches Choppers and com

1.5. ssm3j109tu.pdf Size:205K _toshiba

J109
J109

SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU 0 Power Management Switch Applications 0 High-Speed Switching Applications Unit: mm • 1.8 V drive 2.1±0.1 • Low ON-resistance: Ron = 300 m? (max) (@VGS = -1.8 V) 1.7±0.1 Ron = 172 m? (max) (@VGS = -2.5 V) Ron = 130 m? (max) (@VGS = -4.0 V) 1 Absolute Maximum Ratings (Ta = 25?C) 3 2 Character

1.6. 2sj109.pdf Size:242K _toshiba

J109
J109

1.7. j108_j109_j110_mmbfj108.pdf Size:129K _fairchild_semi

J109
J109

J108/J109/J110/MMBFJ108 N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. 2 • Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking: I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS

1.8. j108_j109_j110_sst108_sst109_sst110.pdf Size:50K _vishay

J109
J109

J/SST108 Series Vishay Siliconix N–Channel JFETs J108 SST108 J109 SST109 J110 SST110 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST108 –3 to –10 8 20 4 J/SST109 –2 to –6 12 20 4 J/SST110 –0.5 to –4 18 20 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: J108 <8 W D Low Error Voltage D Analog Switches D Fast Switching—tON: 4 ns D High-S

1.9. 3sk73_3sk77_2sk240_2sj75_2sk146_2sj73_2sk389_2sj109_2sk266_2sk455_2sk456_2sc3381_2sa1349.pdf Size:150K _no

J109
J109

Datasheet: IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , IRF530 , J110 , J111 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 .

 


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