J109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: J109
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 0.04 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
   Paquete / Cubierta: TO92

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J109 Datasheet (PDF)

..1. Size:45K philips
j108 j109 j110 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETJ108; J109; J110N-channel silicon junction FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction FETs J108; J109; J110FEATURES PINNING - TO-92 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

..2. Size:129K fairchild semi
j108 j109 j110 mmbfj108.pdf

J108/J109/J110/MMBFJ108N-Channel Switch3 This device is designed for digital switching applications where very low on resistance is mandatory.2 Sourced from Process 58.TO-921 SuperSOT-31Marking: I81. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25

..3. Size:50K vishay
j108 j109 j110 sst108 sst109 sst110.pdf

J/SST108 SeriesVishay SiliconixNChannel JFETsJ108 SST108J109 SST109J110 SST110PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST108 3 to 10 8 20 4J/SST109 2 to 6 12 20 4J/SST110 0.5 to 4 18 20 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J108

0.1. Size:34K philips
j108-j109-j110.pdf

0.2. Size:32K philips
pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt

0.3. Size:46K philips
pmbfj108 pmbfj109 pmbfj110.pdf

PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

0.4. Size:205K toshiba
ssm3j109tu.pdf

SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8 V drive 2.10.1 Low ON-resistance: Ron = 300 m (max) (@VGS = -1.8 V) 1.70.1Ron = 172 m (max) (@VGS = -2.5 V) Ron = 130 m (max) (@VGS = -4.0 V) 1Absolute Maximum Ratings (Ta = 25

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2sj109.pdf