IXTZ67N10MB Datasheet. Specs and Replacement

Type Designator: IXTZ67N10MB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: ZPAK

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IXTZ67N10MB substitution

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IXTZ67N10MB datasheet

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IXTZ67N10MB

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Detailed specifications: IXTZ24N50MB, IXTZ27N40MA, IXTZ27N40MB, IXTZ35N25MA, IXTZ35N25MB, IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IRF640, J108, J109, J110, J111, J112, J113, J211, J212

Keywords - IXTZ67N10MB MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.