J110 MOSFET. Datasheet pdf. Equivalent

DISCRETE SEMICONDUCTORSDATA SHEETJ108; J109; J110N-channel silicon junction FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction FETs J108; J109; J110FEATURES PINNING - TO-92 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

J108/J109/J110/MMBFJ108N-Channel Switch3 This device is designed for digital switching applications where very low on resistance is mandatory.2 Sourced from Process 58.TO-921 SuperSOT-31Marking: I81. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25

J/SST108 SeriesVishay SiliconixNChannel JFETsJ108 SST108J109 SST109J110 SST110PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST108 3 to 10 8 20 4J/SST109 2 to 6 12 20 4J/SST110 0.5 to 4 18 20 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J108

Order this documentMOTOROLAby MJ11017/DSEMICONDUCTOR TECHNICAL DATAPNPMJ11017Complementary DarlingtonMJ11021*Silicon Power TransistorsNPN. . . designed for use as general purpose amplifiers, low frequency switching andMJ11018*motor control applications. High dc Current Gain @ 10 Adc hFE = 400 Min (All Types)MJ11022 CollectorEmitter Sustaining Voltage

Order this documentMOTOROLAby MJ11028/DSEMICONDUCTOR TECHNICAL DATANPNMJ11028High-Current ComplementaryMJ11030Silicon TransistorsMJ11032*. . . for use as output devices in complementary general purpose amplifier applica-PNPtions. High DC Current Gain hFE = 1000 (Min) @ IC = 25 AdcMJ11029hFE = 400 (Min) @ IC = 50 Adc Curves to 100 A (Pulsed)MJ11031

Order this documentMOTOROLAby MJ11012/DSEMICONDUCTOR TECHNICAL DATAPNPMJ11013High-Current ComplementaryMJ11015Silicon TransistorsNPNMJ11012. . . for use as output devices in complementary general purpose amplifier applica-tions. High DC Current Gain hFE = 1000 (Min) @ IC 20 AdcMJ11014 Monolithic Construction with Builtin Base Emitter Shunt Resistor

DISCRETE SEMICONDUCTORSDATA SHEETJ108; J109; J110N-channel silicon junction FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction FETs J108; J109; J110FEATURES PINNING - TO-92 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt

PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

SSM3J110TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching Applications 1.8V driveUnit: mm Low on-resistance: Ron = 240m (max) (@VGS = -1.8 V) Ron = 145m (max) (@VGS = -2.5 V) 2.10.1Ron = 94m (max) (@VGS = -4.0 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-Sou

April 2011MMBFJ110N-Channel SwitchSuperSOT-3Features3 This device is designed for digital switching applications2 where very low on resistance is mandatory.Marking : 110 Sourced from process 58.11. Drain 2. Source 3. GateAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -

J110JFET - General PurposeN-Channel - DepletionN-Channel Junction Field Effect Transistors, depletion mode(Type A) designed for general purpose audio amplifiers, analogswitches and choppers.http://onsemi.comFeatures1 DRAIN N-Channel for Higher Gain Drain and Source Interchangeable3 High AC Input ImpedanceGATE High DC Input Resistance Low RDS(on)

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

MJ11021(PNP)MJ11022 (NPN)Complementary DarlingtonSilicon Power TransistorsComplementary Darlington Silicon Power Transistors are designedfor use as general purpose amplifiers, low frequency switching andhttp://onsemi.commotor control applications.15 AMPEREFeaturesCOMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)DARLINGTON POWER Collector-Emi

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary SiliconPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc60 - 120 VOLTS

MJ11015 (PNP); MJ11012,MJ11016 (NPN)MJ11016 is a Preferred DeviceHigh-CurrentComplementary SiliconTransistorshttp://onsemi.com. . . for use as output devices in complementary general purposeamplifier applications.30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORShFE = 1000 (Min) @ IC - 20 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in

MJ11015 (PNP); MJ11012,MJ11016 (NPN)MJ11016 is a Preferred DeviceHigh-CurrentComplementary SiliconTransistorshttp://onsemi.com. . . for use as output devices in complementary general purposeamplifier applications.30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORShFE = 1000 (Min) @ IC - 20 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in

MJ11021(PNP)MJ11022 (NPN)Complementary DarlingtonSilicon Power TransistorsComplementary Darlington Silicon Power Transistors are designedfor use as general purpose amplifiers, low frequency switching andhttp://onsemi.commotor control applications.15 AMPEREFeaturesCOMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)DARLINGTON POWER Collector-Emi

MJ11015 (PNP); MJ11012,MJ11016 (NPN)MJ11016 is a Preferred DeviceHigh-CurrentComplementary SiliconTransistorshttp://onsemi.com. . . for use as output devices in complementary general purposeamplifier applications.30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORShFE = 1000 (Min) @ IC - 20 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyMJ11015 PNPSILICON PLANAR DARLINGTON POWER TRANSISTORSMJ11016 NPNMetal Can PackageTO-3Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO V120Collector

VBJ1101Mwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

isc Silicon NPN Darlington Power Transistor MJ11030DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in comp

isc Silicon NPN Darlington Power Transistor MJ11032DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 120V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11033Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in com

isc Silicon PNP Darlington Power Transistor MJ11017DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = -10AFE CCollector-Emitter Sustaining Voltage-: V = -150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -10ACE(sat) C= -3.4V(Max)@ I = -15ACComplement to the NPN MJ11018Minimum Lot-to-Lot variations for robust deviceperformanc

isc Silicon NPN Darlington Power Transistor MJ11018DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 150V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CComplement to the PNP MJ11017Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Darlington Power Transistor MJ11013DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -20AFE CLow Collector Saturation Voltage-: V = -3.0V(Max.)@ I = -20ACE (sat) CComplement to the NPN MJ11014Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

isc Silicon PNP Darlington Power Transistor MJ11031DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -25AFE C: h = 400(Min.)@I = -50AFE CComplement to the NPN MJ11030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in c

isc Silicon NPN Darlington Power Transistor MJ11028DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in comp

isc Silicon PNP Darlington Power Transistor MJ11019DESCRIPTIONHigh DC Current GainLow Collector-Emitter Saturation VoltageComplement to the NPN MJ11020100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifiers ,low frequencyswitching and motor control applications.ABS

isc Silicon NPN Darlington Power Transistor MJ11022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp

isc Silicon PNP Darlington Power Transistor MJ11029DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -25AFE C: h = 400(Min.)@I = -50AFE CComplement to the NPN MJ11028Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in c

isc Silicon NPN Darlington Power Transistor MJ11020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11016 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to Type MJ11015 APPLICATIONS Designed for use as output devices

isc Silicon PNP Darlington Power Transistor MJ11015DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -20AFE CLow Collector Saturation Voltage-: V = -3.0V(Max.)@ I = -20ACE (sat) CComplement to the NPN MJ11016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICA

isc Silicon NPN Darlington Power Transistor MJ11014DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 20AFE CLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 20ACE (sat) CComplement to the PNP MJ11013Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon NPN Darlington Power Transistor MJ11012DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 20AFE CLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 20ACE (sat) CComplement to the PNP MJ11011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11033 DESCRIPTION Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A Complement to Type MJ11032 APPLICATIONS Designed for use as output devices in complementary general purpose amplifie

isc Silicon PNP Darlington Power Transistor MJ11011DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -20AFE CLow Collector Saturation Voltage-: V = -3.0V(Max.)@ I = -20ACE (sat) CComplement to NPN Type MJ11012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT