IXTZ42N20MB Datasheet and Replacement
Type Designator: IXTZ42N20MB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: ZPAK
IXTZ42N20MB substitution
IXTZ42N20MB Datasheet (PDF)
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Datasheet: IXTZ20N60MB , IXTZ24N50MA , IXTZ24N50MB , IXTZ27N40MA , IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IRF640 , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , J111 , J112 , J113 .
History: LSD70R1KGT
Keywords - IXTZ42N20MB MOSFET datasheet
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History: LSD70R1KGT
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