JMTG320N10A Datasheet. Specs and Replacement
Type Designator: JMTG320N10A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: PDFN5X6-8L
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JMTG320N10A substitution
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JMTG320N10A datasheet
jmtg320n10a.pdf
100V, 28A, 24.1m N-channel Power Trench MOSFET JMTG320N10A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 28 A RDS(ON)_Typ(@VGS=10V 22.4 mW Applications RDS(ON)_Typ(@VGS=4.5V 24.1 mW Load Switch PWM Application ... See More ⇒
jmtg3002b.pdf
JMTG3002B Description JMT N-channel Enhancement Mode Power MOSFET Features Application 30V,120A Load Switch R ... See More ⇒
jmtg3002b.pdf
JMTG3002B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 120A Load Switch RDS(ON) ... See More ⇒
jmtg3005c.pdf
30V, 103A, 5.7m N-channel Power Trench MOSFET JMTG3005C Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 103 A RDS(ON)_Typ(@VGS=10V 3.2 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.7 mW Load Switch PWM Application P... See More ⇒
Detailed specifications: JMTG200C03D, JMTG28DN10D, JMTG3003A, JMTG3005A, JMTG3005B, JMTG3005C, JMTG3008A, JMTG3008D, STP65NF06, JMTG4004A, JMTG60N04B, JMTG90N02A, JMSL0615AGD, JMSL0615AGDQ, JMSL0615AP, JMSL0615APD, JMSL0615AUD
Keywords - JMTG320N10A MOSFET specs
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