JMTG200C03D Datasheet and Replacement
Type Designator: JMTG200C03D
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 71 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: PDFN5X6-8L-D
JMTG200C03D substitution
JMTG200C03D Datasheet (PDF)
jmtg200c03d.pdf
30V, 11A&-11A, 21m&20m N And P-channel Power Trench MOSFETJMTG200C03D Product SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters N P Unit 100% UIS TESTEDVDSS 30 -30 V 100% Vds TESTEDVGS(th)_Typ 1.7 -1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 11 -11 ARDS(ON)_Typ(@VGS=10V 15 15 Pb-free plating mWRDS(ON)_Typ(@VGS=4.5V 21 20 mWAp
jmtg28dn10d.pdf
JMTG28DN10DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Application 100V,4.5A Load SwitchR
Datasheet: JMSL10380G , JMSL10380P , JMSL10380U , JMSL10380Y , JMTG120C03D , JMTG130P04A , JMTG170C04D , JMTG170N06A , STF13NM60N , JMTG28DN10D , JMTG3003A , JMTG3005A , JMTG3005B , JMTG3005C , JMTG3008A , JMTG3008D , JMTG320N10A .
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