IXTZ67N10MA MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTZ67N10MA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 67 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: ZPAK
IXTZ67N10MA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTZ67N10MA Datasheet (PDF)
Datasheet: IXTZ24N50MA , IXTZ24N50MB , IXTZ27N40MA , IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IRF640 , IXTZ67N10MB , J108 , J109 , J110 , J111 , J112 , J113 , J211 .
LIST
Last Update
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F