IXTZ67N10MA PDF Specs and Replacement
Type Designator: IXTZ67N10MA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 67 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: ZPAK
IXTZ67N10MA substitution
IXTZ67N10MA PDF Specs
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Detailed specifications: IXTZ24N50MA , IXTZ24N50MB , IXTZ27N40MA , IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IRF640 , IXTZ67N10MB , J108 , J109 , J110 , J111 , J112 , J113 , J211 .
Keywords - IXTZ67N10MA MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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