IXTZ35N25MB Datasheet. Specs and Replacement
Type Designator: IXTZ35N25MB 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: ZPAK
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IXTZ35N25MB substitution
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IXTZ35N25MB datasheet
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Detailed specifications: IXTU01N80, IXTZ20N60MA, IXTZ20N60MB, IXTZ24N50MA, IXTZ24N50MB, IXTZ27N40MA, IXTZ27N40MB, IXTZ35N25MA, IRF540N, IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109, J110, J111
Keywords - IXTZ35N25MB MOSFET specs
IXTZ35N25MB cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
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