J108 Datasheet. Specs and Replacement
Type Designator: J108 📄📄
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 0.08 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO92
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J108 substitution
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J108 datasheet
j108 j109 j110 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr... See More ⇒
j108 j109 j110 mmbfj108.pdf
J108/J109/J110/MMBFJ108 N-Channel Switch 3 This device is designed for digital switching applications where very low on resistance is mandatory. 2 Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25... See More ⇒
j108-j109-j110.pdf
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr... See More ⇒
Detailed specifications: IXTZ27N40MA, IXTZ27N40MB, IXTZ35N25MA, IXTZ35N25MB, IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, IRLZ44N, J109, J110, J111, J112, J113, J211, J212, JANSR2N7272
Keywords - J108 MOSFET specs
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