J108 MOSFET. Datasheet pdf. Equivalent

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J108 Datasheet (PDF)

0.1. pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf Size:32K _philips

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt

0.2. j108 j109 j110 1.pdf Size:45K _philips

DISCRETE SEMICONDUCTORSDATA SHEETJ108; J109; J110N-channel silicon junction FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction FETs J108; J109; J110FEATURES PINNING - TO-92 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

 0.3. pmbfj108 pmbfj109 pmbfj110.pdf Size:46K _philips

PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

0.4. j108-j109-j110.pdf Size:34K _philips

DISCRETE SEMICONDUCTORSDATA SHEETJ108; J109; J110N-channel silicon junction FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction FETs J108; J109; J110FEATURES PINNING - TO-92 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

 0.5. 2sj108.pdf Size:339K _toshiba

2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ amplifiers and MC head amplifiers. High |Y |: |Y | = 22 mS (typ.) fs fs(V = -10 V, V = 0, I = -3 mA) DS GS DSS Low noise: En = 0.95 nV/Hz1/2 (typ.) (V = -10 V, I = -1 mA, f = 1 kHz) DS D High i

0.6. ssm3j108tu.pdf Size:147K _toshiba

SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications 1.8V driveUnit: mm Low on-resistance: Ron = 363m (max) (@VGS = -1.8 V) Ron = 230m (max) (@VGS = -2.5 V) 2.10.1Ron = 158m (max) (@VGS = -4.0 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-So

0.7. j108 j109 j110 mmbfj108.pdf Size:129K _fairchild_semi

J108/J109/J110/MMBFJ108N-Channel Switch3 This device is designed for digital switching applications where very low on resistance is mandatory.2 Sourced from Process 58.TO-921 SuperSOT-31Marking: I81. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25

0.8. mmbfj108.pdf Size:128K _fairchild_semi

J108/J109/J110/MMBFJ108N-Channel Switch3 This device is designed for digital switching applications where very low on resistance is mandatory.2 Sourced from Process 58.TO-921 SuperSOT-31Marking: I81. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25

0.9. j108 j109 j110 sst108 sst109 sst110.pdf Size:50K _vishay

J/SST108 SeriesVishay SiliconixNChannel JFETsJ108 SST108J109 SST109J110 SST110PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST108 3 to 10 8 20 4J/SST109 2 to 6 12 20 4J/SST110 0.5 to 4 18 20 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J108

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