J108 Todos los transistores

 ..1. Size:45K  philips
 j108 j109 j110 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr

 ..2. Size:129K  fairchild semi
 j108 j109 j110 mmbfj108.pdf

J108/J109/J110/MMBFJ108 N-Channel Switch 3 This device is designed for digital switching applications where very low on resistance is mandatory. 2 Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25

 ..3. Size:50K  vishay
 j108 j109 j110 sst108 sst109 sst110.pdf

 0.1. Size:34K  philips
 j108-j109-j110.pdf

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr

 0.2. Size:32K  philips
 pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate volt

 0.3. Size:46K  philips
 pmbfj108 pmbfj109 pmbfj110.pdf

PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

 0.4. Size:339K  toshiba
 2sj108.pdf

2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit mm Recommended for first stages of EQ amplifiers and MC head amplifiers. High Y Y = 22 mS (typ.) fs fs (V = -10 V, V = 0, I = -3 mA) DS GS DSS Low noise En = 0.95 nV/Hz1/2 (typ.) (V = -10 V, I = -1 mA, f = 1 kHz) DS D High i

 0.5. Size:147K  toshiba
 ssm3j108tu.pdf

SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications 1.8V drive Unit mm Low on-resistance Ron = 363m (max) (@VGS = -1.8 V) Ron = 230m (max) (@VGS = -2.5 V) 2.1 0.1 Ron = 158m (max) (@VGS = -4.0 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-So

 0.6. Size:128K  fairchild semi
 mmbfj108.pdf

J108/J109/J110/MMBFJ108 N-Channel Switch 3 This device is designed for digital switching applications where very low on resistance is mandatory. 2 Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25