J212 PDF and Equivalents Search

DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212 FEATURES PINNING - TO-92 (SOT54) High speed switching PIN SYMBOL DESCRIPTION Interchangeability of drain and source co... See More ⇒

J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 1 to 3 25 4 2 J/SSTJ211 2.5 to 4.5 25 6 7 J/SSTJ212 4 to 6 25 7 15 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer J... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 FEATURES PINNING - SOT23 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr... See More ⇒

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J212FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta ... See More ⇒

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SMD Type MOSFET P-Channel MOSFET 2SJ212 1.70 0.1 Features VDS (V) =-60V ID =-500m A 0.42 0.1 0.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0.5 A Pul... See More ⇒