All MOSFET. J212 Datasheet

 

J212 MOSFET. Datasheet pdf. Equivalent


   Type Designator: J212
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 0.04 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 0.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
   Package: TO92
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J212 Datasheet (PDF)

 ..1. Size:100K  philips
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J212
J212

DISCRETE SEMICONDUCTORSDATA SHEETJ210; J211; J212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors J210; J211; J212FEATURES PINNING - TO-92 (SOT54) High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of drain and source co

 ..2. Size:55K  vishay
j210 j211 sstj211 j212 sstj212.pdf pdf_icon

J212
J212

J/SSTJ210 SeriesVishay SiliconixN-Channel JFETsJ210 SSTJ211J211 SSTJ212J212PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J210 1 to 3 25 4 2J/SSTJ211 2.5 to 4.5 25 6 7J/SSTJ212 4 to 6 25 7 15FEATURES BENEFITS APPLICATIONSD Excellent High Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerJ

 0.1. Size:100K  philips
pmbfj210 pmbfj211 pmbfj212 1.pdf pdf_icon

J212
J212

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ210; PMBFJ211;PMBFJ212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212FEATURES PINNING - SOT23 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

 0.2. Size:190K  toshiba
ssm6j212fe.pdf pdf_icon

J212
J212

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J212FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta

Datasheet: IXTZ67N10MB , J108 , J109 , J110 , J111 , J112 , J113 , J211 , IRFB4227 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 , JANSR2N7395 , JANSR2N7396 , JANSR2N7398 .

 

 
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