J212 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J212

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Id|ⓘ - Corriente continua de drenaje: 0.04 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 0.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 20 Ohm

Encapsulados: TO92

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J212 datasheet

 ..1. Size:100K  philips
 j210 j211 j212 1.pdf pdf_icon

J212

DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212 FEATURES PINNING - TO-92 (SOT54) High speed switching PIN SYMBOL DESCRIPTION Interchangeability of drain and source co

 ..2. Size:55K  vishay
 j210 j211 sstj211 j212 sstj212.pdf pdf_icon

J212

J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 1 to 3 25 4 2 J/SSTJ211 2.5 to 4.5 25 6 7 J/SSTJ212 4 to 6 25 7 15 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer J

 0.1. Size:100K  philips
 pmbfj210 pmbfj211 pmbfj212 1.pdf pdf_icon

J212

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 FEATURES PINNING - SOT23 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr

 0.2. Size:190K  toshiba
 ssm6j212fe.pdf pdf_icon

J212

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J212FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta

MOSTRAR MÁS

Otros transistores... IXTZ67N10MB, J108, J109, J110, J111, J112, J113, J211, 10N60, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292, JANSR2N7294, JANSR2N7395, JANSR2N7396, JANSR2N7398