J212 - Даташиты. Аналоги. Основные параметры

DISCRETE SEMICONDUCTORSDATA SHEETJ210; J211; J212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors J210; J211; J212FEATURES PINNING - TO-92 (SOT54) High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of drain and source co

J/SSTJ210 SeriesVishay SiliconixN-Channel JFETsJ210 SSTJ211J211 SSTJ212J212PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J210 1 to 3 25 4 2J/SSTJ211 2.5 to 4.5 25 6 7J/SSTJ212 4 to 6 25 7 15FEATURES BENEFITS APPLICATIONSD Excellent High Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerJ

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ210; PMBFJ211;PMBFJ212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212FEATURES PINNING - SOT23 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J212FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta

SMD Type MOSFETP-Channel MOSFET2SJ2121.70 0.1 Features VDS (V) =-60V ID =-500m A0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0.5A Pul