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J211 PDF Specs and Replacement


   Type Designator: J211
   Type of Transistor: JFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 0.02 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Cossⓘ - Output Capacitance: 0.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: TO92
 

 J211 substitution

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J211 PDF Specs

 ..1. Size:100K  philips
j210 j211 j212 1.pdf pdf_icon

J211

DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212 FEATURES PINNING - TO-92 (SOT54) High speed switching PIN SYMBOL DESCRIPTION Interchangeability of drain and source co... See More ⇒

 ..2. Size:55K  vishay
j210 j211 sstj211 j212 sstj212.pdf pdf_icon

J211

J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 1 to 3 25 4 2 J/SSTJ211 2.5 to 4.5 25 6 7 J/SSTJ212 4 to 6 25 7 15 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer J... See More ⇒

 0.1. Size:173K  motorola
mj21193r.pdf pdf_icon

J211

Order this document MOTOROLA by MJ21193/D SEMICONDUCTOR TECHNICAL DATA PNP * MJ21193 NPN Silicon Power Transistors * MJ21194 The MJ21193 and MJ21194 utilize Perforated Emitter technology and are *Motorola Preferred Device specifically designed for high power audio output, disk head positioners and linear applications. 16 AMPERE COMPLEMENTARY Total Harmonic Distortion Charac... See More ⇒

 0.2. Size:100K  philips
pmbfj210 pmbfj211 pmbfj212 1.pdf pdf_icon

J211

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 FEATURES PINNING - SOT23 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr... See More ⇒

Detailed specifications: IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , J111 , J112 , J113 , IRF3710 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 , JANSR2N7395 , JANSR2N7396 .

History: J113

Keywords - J211 MOSFET specs

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