J211 PDF Specs and Replacement
Type Designator: J211
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Id| ⓘ - Maximum Drain Current: 0.02
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
Cossⓘ -
Output Capacitance: 0.8
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 50
Ohm
Package:
TO92
-
MOSFET ⓘ Cross-Reference Search
J211 PDF Specs
..1. Size:100K philips
j210 j211 j212 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212 FEATURES PINNING - TO-92 (SOT54) High speed switching PIN SYMBOL DESCRIPTION Interchangeability of drain and source co... See More ⇒
..2. Size:55K vishay
j210 j211 sstj211 j212 sstj212.pdf 
J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 1 to 3 25 4 2 J/SSTJ211 2.5 to 4.5 25 6 7 J/SSTJ212 4 to 6 25 7 15 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer J... See More ⇒
0.1. Size:173K motorola
mj21193r.pdf 
Order this document MOTOROLA by MJ21193/D SEMICONDUCTOR TECHNICAL DATA PNP * MJ21193 NPN Silicon Power Transistors * MJ21194 The MJ21193 and MJ21194 utilize Perforated Emitter technology and are *Motorola Preferred Device specifically designed for high power audio output, disk head positioners and linear applications. 16 AMPERE COMPLEMENTARY Total Harmonic Distortion Charac... See More ⇒
0.2. Size:100K philips
pmbfj210 pmbfj211 pmbfj212 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 FEATURES PINNING - SOT23 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr... See More ⇒
0.4. Size:153K onsemi
mj21194g.pdf 
MJ21193, MJ21194 Preferred Device Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http //onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 AMP COMPLEMENTARY ... See More ⇒
0.5. Size:125K onsemi
mj21195g mj21196g.pdf 
MJ21195G - PNP MJ21196G - NPN Silicon Power Transistors The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain POWER TRANSISTORS Excelle... See More ⇒
0.6. Size:94K onsemi
mj21195-96.pdf 
ON Semiconductort PNP * MJ21195 Silicon Power Transistors NPN * MJ21196 The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. 16 AMPERE Total Harmonic Distortion Characterized COMPLEMENTARY High DC Current Gain SILICON ... See More ⇒
0.7. Size:153K onsemi
mj21193g.pdf 
MJ21193, MJ21194 Preferred Device Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http //onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 AMP COMPLEMENTARY ... See More ⇒
0.8. Size:83K onsemi
mj21196g.pdf 
MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @... See More ⇒
0.9. Size:122K onsemi
mj21193 mj21194.pdf 
MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Lin... See More ⇒
0.10. Size:82K onsemi
mj21195 mj21196.pdf 
MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @... See More ⇒
0.11. Size:83K onsemi
mj21195g.pdf 
MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @... See More ⇒
0.12. Size:1228K kexin
2sj211-3.pdf 
SMD Type MOSFET P-Channel MOSFET 2SJ211 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-100V 1 2 +0.02 ID =-0.2 A +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 20 (VGS =-10V) RDS(ON) 30 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage... See More ⇒
0.13. Size:1220K kexin
2sj211.pdf 
SMD Type MOSFET P-Channel MOSFET 2SJ211 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-100V 1 2 ID =-0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 20 (VGS =-10V) RDS(ON) 30 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS... See More ⇒
0.14. Size:167K cn sptech
mj21194.pdf 
SPTECH Product Specification Silicon NPN Power Transistor MJ21194 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25-75@I = 8A,V = 5V FE C CE Collector-Emitter Saturation Voltage- V )= 1.4 V(Max)@ I = 8A CE(sat C Complement to the PNP MJ21193 APPLICATIONS Designed for high power audio output, disk head positioners and other linear applications. ABSOLUT... See More ⇒
0.15. Size:167K cn sptech
mj21193.pdf 
SPTECH Product Specification Silicon PNP Power Transistor MJ21193 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25-75@I = -8A,V =-5V FE C CE Collector-Emitter Saturation Voltage- V )= -1.4 V(Max)@ I = -8A CE(sat C Complement to the NPN MJ21194 APPLICATIONS Designed for high power audio output, disk head positioners and other linear applications. ABSO... See More ⇒
0.16. Size:201K inchange semiconductor
mj21194.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONS Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Em... See More ⇒
0.17. Size:201K inchange semiconductor
mj21193.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONS Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Em... See More ⇒
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, IXTZ67N10MB
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Keywords - J211 MOSFET specs
J211 cross reference
J211 equivalent finder
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