J211
MOSFET. Datasheet pdf. Equivalent
Type Designator: J211
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Id|ⓘ - Maximum Drain Current: 0.02
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 0.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 50
Ohm
Package:
TO92
J211
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J211
Datasheet (PDF)
..1. Size:100K philips
j210 j211 j212 1.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETJ210; J211; J212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors J210; J211; J212FEATURES PINNING - TO-92 (SOT54) High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of drain and source co
..2. Size:55K vishay
j210 j211 sstj211 j212 sstj212.pdf 
J/SSTJ210 SeriesVishay SiliconixN-Channel JFETsJ210 SSTJ211J211 SSTJ212J212PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J210 1 to 3 25 4 2J/SSTJ211 2.5 to 4.5 25 6 7J/SSTJ212 4 to 6 25 7 15FEATURES BENEFITS APPLICATIONSD Excellent High Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerJ
0.1. Size:173K motorola
mj21193r.pdf 
Order this documentMOTOROLAby MJ21193/DSEMICONDUCTOR TECHNICAL DATAPNP*MJ21193NPNSilicon Power Transistors*MJ21194The MJ21193 and MJ21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications.16 AMPERECOMPLEMENTARY Total Harmonic Distortion Charac
0.2. Size:100K philips
pmbfj210 pmbfj211 pmbfj212 1.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ210; PMBFJ211;PMBFJ212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212FEATURES PINNING - SOT23 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr
0.4. Size:153K onsemi
mj21194g.pdf 
MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY
0.5. Size:125K onsemi
mj21195g mj21196g.pdf 
MJ21195G - PNPMJ21196G - NPNSilicon Power TransistorsThe MJ21195G and MJ21196G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current GainPOWER TRANSISTORS Excelle
0.6. Size:94K onsemi
mj21195-96.pdf 
ON SemiconductortPNP*MJ21195Silicon Power TransistorsNPN*MJ21196The MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk head*ON Semiconductor Preferred Devicepositioners and linear applications.16 AMPERE Total Harmonic Distortion CharacterizedCOMPLEMENTARY High DC Current Gain SILICON
0.7. Size:153K onsemi
mj21193g.pdf 
MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY
0.8. Size:83K onsemi
mj21196g.pdf 
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
0.9. Size:122K onsemi
mj21193 mj21194.pdf 
MJ21193 - PNPMJ21194 - NPNSilicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Lin
0.10. Size:82K onsemi
mj21195 mj21196.pdf 
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
0.11. Size:83K onsemi
mj21195g.pdf 
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
0.12. Size:1228K kexin
2sj211-3.pdf 
SMD Type MOSFETP-Channel MOSFET2SJ211SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-100V1 2+0.02 ID =-0.2 A +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 20 (VGS =-10V) RDS(ON) 30 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage
0.13. Size:1220K kexin
2sj211.pdf 
SMD Type MOSFETP-Channel MOSFET2SJ211SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-100V1 2 ID =-0.2 A+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 20 (VGS =-10V) RDS(ON) 30 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS
0.14. Size:167K cn sptech
mj21194.pdf 
SPTECH Product SpecificationSilicon NPN Power Transistor MJ21194DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = 8A,V = 5VFE C CECollector-Emitter Saturation Voltage-: V )= 1.4 V(Max)@ I = 8ACE(sat CComplement to the PNP MJ21193APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSOLUT
0.15. Size:167K cn sptech
mj21193.pdf 
SPTECH Product SpecificationSilicon PNP Power Transistor MJ21193DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = -8A,V =-5VFE C CECollector-Emitter Saturation Voltage-: V )= -1.4 V(Max)@ I = -8ACE(sat CComplement to the NPN MJ21194APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSO
0.16. Size:201K inchange semiconductor
mj21194.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em
0.17. Size:201K inchange semiconductor
mj21193.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em
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