JMTG170C04D MOSFET Datasheet: NP-Ch, 40V, 16A. Full specification with pinout and replacement list

JMTG170C04D Specs and Replacement

   Type Designator: JMTG170C04D
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFN5X6-8L-D

JMTG170C04D substitution

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JMTG170C04D datasheet

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40V, 16A, 18.5m &37.3m N And P-channel Power Trench MOSFET JMTG170C04D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters N P Unit 100% UIS TESTED VDSS 40 -40 V 100% Vds TESTED VGS(th)_Typ 1.9 -1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 16 -16 A Pb-free plating RDS(ON)_Typ(@VGS=10V 14.4 31.1 mW RDS(ON)_Typ(@VGS=4.5V 18.5 37... See More ⇒

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-40V, -69A, 10.2m P-channel Power Trench MOSFET JMTG130P04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -40 V 100% Vds Tested VGS(th)_Typ -1.5 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -69 A RDS(ON)_Typ(@VGS=-10V 8.3 mW RDS(ON)_Typ(@VGS=-4.5V 10.2 mW Applications Load Switch PWM Applicat... See More ⇒

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