JMTG3008A Specs and Replacement
Type Designator: JMTG3008A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 162 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: PDFN5X6-8L
JMTG3008A substitution
JMTG3008A datasheet
jmtg3008a.pdf
JMTG3008A Description JMT N-channel Enhancement Mode Power MOSFET Applications Features 30V, 40A Load Switch RDS(ON) ... See More ⇒
jmtg3002b.pdf
JMTG3002B Description JMT N-channel Enhancement Mode Power MOSFET Features Application 30V,120A Load Switch R ... See More ⇒
jmtg3002b.pdf
JMTG3002B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 120A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: JMTG170C04D , JMTG170N06A , JMTG200C03D , JMTG28DN10D , JMTG3003A , JMTG3005A , JMTG3005B , JMTG3005C , SI2302 , JMTG3008D , JMTG320N10A , JMTG4004A , JMTG60N04B , JMTG90N02A , JMSL0615AGD , JMSL0615AGDQ , JMSL0615AP .
History: SFH9154 | BUZ101S | 2SJ188 | APTM120DA30CT1G | IPD90N04S3-H4 | P0660EI | APT1201R6BVFR
Keywords - JMTG3008A MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SFH9154 | BUZ101S | 2SJ188 | APTM120DA30CT1G | IPD90N04S3-H4 | P0660EI | APT1201R6BVFR
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