FDS3572 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS3572
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 31 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 320 pF
Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm
Package: SO-8
FDS3572 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS3572 Datasheet (PDF)
fds3572.pdf
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fds3570.pdf
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fds3580.pdf
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fds3590.pdf
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fds3512.pdf
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