FDS3572 Datasheet. Specs and Replacement

Type Designator: FDS3572  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SO-8

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FDS3572 datasheet

 ..1. Size:628K  fairchild semi
fds3572.pdf pdf_icon

FDS3572

November 2003 FDS3572 N-Channel PowerTrench MOSFET 80V, 8.9A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 8.9A Primary switch for Isolated DC/DC converters Qg(tot) = 31nC (Typ.), VGS = 10V Distributed Power and Intermediate Bus Architectures Low Miller Charge High Voltage Synchronous Rectifier for DC Bus Low QRR Body Diode Conv... See More ⇒

 8.1. Size:81K  fairchild semi
fds3570.pdf pdf_icon

FDS3572

December 2000 FDS3570 80V N-Channel PowerTrench MOSFET General Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.023 @ VGS = 6 V. converters using either synchronous or conventional switching PWM controllers. Fast swi... See More ⇒

 9.1. Size:83K  fairchild semi
fds3580.pdf pdf_icon

FDS3572

December 2000 FDS3580 80V N-Channel PowerTrench MOSFET General Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.033 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge (3... See More ⇒

 9.2. Size:86K  fairchild semi
fds3590.pdf pdf_icon

FDS3572

November 2000 FDS3590 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 44 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOSFETs feature faster... See More ⇒

Detailed specifications: FDS2670, STF2456, FDS2672, STF2455, FDS2672F085, STF2454A, FDS2734, FDS3512, 4435, FDS3590, FDS3672, STF2454, FDS3692, STF06N20, FDS3890, FDS3992, STE339S

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