FDS4672A MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS4672A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 35 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 346 pF
Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
Package: SO-8
FDS4672A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS4672A Datasheet (PDF)
fds4672a.pdf
February 2007tmFDS4672A 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 11 A, 40 V. RDS(ON) = 13 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been op
fds4672a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds4672a.pdf
FDS4672Awww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectific
fds4675.pdf
February 2001 FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of g
fds4675 f085.pdf
February 2010tmFDS4675_F085 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide ra
fds4685.pdf
June 2005FDS468540V P-Channel PowerTrench MOSFETFeatures Applications 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Power managementRDS(ON) = 0.035 @ VGS = 4.5 V Load switch Fast switching speed Battery protection High performance trench technology for extremely low RDS(ON) General Description High power and current handling capabi
fds4685.pdf
FDS468540V P-Channel PowerTrench MOSFETApplicationsFeatures Power management 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Load switchRDS(ON) = 0.035 @ VGS = 4.5 V Battery protection Fast switching speed High performance trench technology for extremely lowGeneral DescriptionRDS(ON) High power and current handling capability This P-
fds4685-nl.pdf
FDS4685-NLwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD
Datasheet: STD12L01 , FDS4501H , STB458D , STB440S , FDS4559 , STB438S , FDS4559F085 , STB438A , STP65NF06 , FDS4675F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S , FDS4935A , FDS4935BZ .
