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FDS4672A PDF Specs and Replacement


   Type Designator: FDS4672A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 346 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO-8
 

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FDS4672A PDF Specs

 ..1. Size:439K  fairchild semi
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FDS4672A

February 2007 tm FDS4672A 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 11 A, 40 V. RDS(ON) = 13 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been op... See More ⇒

 ..2. Size:289K  onsemi
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FDS4672A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:1505K  cn vbsemi
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FDS4672A

FDS4672A www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectific... See More ⇒

 8.1. Size:73K  fairchild semi
fds4675.pdf pdf_icon

FDS4672A

February 2001 FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of g... See More ⇒

Detailed specifications: STD12L01 , FDS4501H , STB458D , STB440S , FDS4559 , STB438S , FDS4559F085 , STB438A , P60NF06 , FDS4675F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S , FDS4935A , FDS4935BZ .

Keywords - FDS4672A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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