All MOSFET. FDS6680AS Datasheet

 

FDS6680AS MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS6680AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 2.5 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 11.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 22 nC
   Rise Time (tr): 5 nS
   Drain-Source Capacitance (Cd): 350 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
   Package: SO-8

 FDS6680AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS6680AS Datasheet (PDF)

 ..1. Size:982K  fairchild semi
 fds6680as.pdf

FDS6680AS FDS6680AS

May 2008 tmFDS6680AS 30V N-Channel PowerTrench SyncFETGeneral Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

 ..2. Size:852K  onsemi
 fds6680as.pdf

FDS6680AS FDS6680AS

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:102K  fairchild semi
 fds6680a.pdf

FDS6680AS FDS6680AS

November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductors advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint

 6.2. Size:229K  onsemi
 fds6680a.pdf

FDS6680AS FDS6680AS

FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced using ON Semiconductors advanced PowerRDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maintain Ultra-low gate

 7.1. Size:107K  fairchild semi
 fds6680.pdf

FDS6680AS FDS6680AS

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O

 7.2. Size:84K  fairchild semi
 fds6680s.pdf

FDS6680AS FDS6680AS

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O

Datasheet: FDS6670AS , STA6968 , FDS6673BZ , FDS6673BZF085 , FDS6675BZ , FDS6676AS , STA6620 , FDS6679AZ , IRF3205 , STA6611 , FDS6681Z , FDS6682 , STA6610 , FDS6690AS , STA4470 , FDS6692A , SP8651 .

History: SSD50N06-15D

 

 
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