FDS6680AS - описание и поиск аналогов

 

FDS6680AS. Аналоги и основные параметры

Наименование производителя: FDS6680AS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 350 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm

Тип корпуса: SO-8

Аналог (замена) для FDS6680AS

- подборⓘ MOSFET транзистора по параметрам

 

FDS6680AS даташит

 ..1. Size:982K  fairchild semi
fds6680as.pdfpdf_icon

FDS6680AS

May 2008 tm FDS6680AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

 ..2. Size:852K  onsemi
fds6680as.pdfpdf_icon

FDS6680AS

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:102K  fairchild semi
fds6680a.pdfpdf_icon

FDS6680AS

November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint

 6.2. Size:229K  onsemi
fds6680a.pdfpdf_icon

FDS6680AS

FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V This N-Channel Logic Level MOSFET is produced using ON Semiconductor s advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maintain Ultra-low gate

Другие MOSFET... FDS6670AS , STA6968 , FDS6673BZ , FDS6673BZF085 , FDS6675BZ , FDS6676AS , STA6620 , FDS6679AZ , IRF3205 , STA6611 , FDS6681Z , FDS6682 , STA6610 , FDS6690AS , STA4470 , FDS6692A , SP8651 .

History: FDS6986AS | FDS6679AZ | FDS6673BZ

 

 

 

 

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