STA6611 MOSFET. Datasheet pdf. Equivalent
Type Designator: STA6611
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 7.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 14.4 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm
Package: PDIP8
STA6611 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STA6611 Datasheet (PDF)
sta6611.pdf
STA6611SamHop Microelectronics Corp.Nov. 22, 2006Dual Enhancement Mode Field Effect Transistor ( N and P Channel)PRODUCT SUMMARY (N-Channel) (P-Channel)PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max23 @ VGS = 10V 35 @ VGS = -10V-30V -6.6A30V 7.6A30 @ VGS = 4.5V 55 @ VGS = -4.5VD1 D1 D2 D28 7 6 5P DIP -81 1 2 3 4S 1 G 1 S 2 G 2ABSOLUTE
sta6610.pdf
S TA6610S amHop Microelectronics C orp.Nov.24 2006Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.23 @ VG S = 10VS urface Mount Package.30V7.6A35 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5P DIP -81 1 2 3 4S 1 G 1
sta6620.pdf
S TA6620S amHop Microelectronics C orp.Nov. 24 2006Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.25 @ VG S = 10VS urface Mount Package.40V 7A42 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5P DIP -81 2 3 41S 1 G 1 S
Datasheet: STA6968 , FDS6673BZ , FDS6673BZF085 , FDS6675BZ , FDS6676AS , STA6620 , FDS6679AZ , FDS6680AS , 20N60 , FDS6681Z , FDS6682 , STA6610 , FDS6690AS , STA4470 , FDS6692A , SP8651 , FDS6699S .
History: STA6620
