STA6611 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STA6611 Datasheet (PDF)

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STA6611SamHop Microelectronics Corp.Nov. 22, 2006Dual Enhancement Mode Field Effect Transistor ( N and P Channel)PRODUCT SUMMARY (N-Channel) (P-Channel)PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max23 @ VGS = 10V 35 @ VGS = -10V-30V -6.6A30V 7.6A30 @ VGS = 4.5V 55 @ VGS = -4.5VD1 D1 D2 D28 7 6 5P DIP -81 1 2 3 4S 1 G 1 S 2 G 2ABSOLUTE

8.1. Size:114K samhop
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S TA6610S amHop Microelectronics C orp.Nov.24 2006Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.23 @ VG S = 10VS urface Mount Package.30V7.6A35 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5P DIP -81 1 2 3 4S 1 G 1

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S TA6620S amHop Microelectronics C orp.Nov. 24 2006Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.25 @ VG S = 10VS urface Mount Package.40V 7A42 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5P DIP -81 2 3 41S 1 G 1 S

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