STA4470 MOSFET. Datasheet pdf. Equivalent
Type Designator: STA4470
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 25 nC
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 230 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: PDIP8
STA4470 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STA4470 Datasheet (PDF)
sta4470.pdf
STA4470aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12 @ VGS=10VSuface Mount Package.40V 11A16 @ VGS=4.5VPDIP-81(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter UnitsLimitVDS
Datasheet: STA6620 , FDS6679AZ , FDS6680AS , STA6611 , FDS6681Z , FDS6682 , STA6610 , FDS6690AS , IRF640 , FDS6692A , SP8651 , FDS6699S , SP8611 , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZF085 .
History: SSD50N06-15D
History: SSD50N06-15D
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