STA4470 Datasheet. Specs and Replacement

Type Designator: STA4470  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: PDIP8

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STA4470 datasheet

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STA4470

STA4470 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12 @ VGS=10V Suface Mount Package. 40V 11A 16 @ VGS=4.5V PDIP-8 1 (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS ... See More ⇒

Detailed specifications: STA6620, FDS6679AZ, FDS6680AS, STA6611, FDS6681Z, FDS6682, STA6610, FDS6690AS, 50N06, FDS6692A, SP8651, FDS6699S, SP8611, FDS6892A, FDS6898A, FDS6898AZ, FDS6898AZF085

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