STA4470 Datasheet and Replacement
Type Designator: STA4470
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDIP8
STA4470 substitution
STA4470 Datasheet (PDF)
sta4470.pdf

STA4470aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12 @ VGS=10VSuface Mount Package.40V 11A16 @ VGS=4.5VPDIP-81(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter UnitsLimitVDS
Datasheet: STA6620 , FDS6679AZ , FDS6680AS , STA6611 , FDS6681Z , FDS6682 , STA6610 , FDS6690AS , 50N06 , FDS6692A , SP8651 , FDS6699S , SP8611 , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZF085 .
History: AON6906 | AOTL66810Q | OSG60R320FT3ZF | OSG60R1K8AF | SVF7N65CS | ELM34406AA-N | FDS6898AZ
Keywords - STA4470 MOSFET datasheet
STA4470 cross reference
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History: AON6906 | AOTL66810Q | OSG60R320FT3ZF | OSG60R1K8AF | SVF7N65CS | ELM34406AA-N | FDS6898AZ



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