SP8009EL MOSFET. Datasheet pdf. Equivalent
Type Designator: SP8009EL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.67 W
Maximum Drain-Source Voltage |Vds|: 33 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 24 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 26 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 362 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TSON3.3X3.3
SP8009EL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SP8009EL Datasheet (PDF)
sp8009el.pdf
GreenProductSP8009ELaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.5.0 @ VGS=10VSuface Mount Package.33V 24A6.5 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAX
sp8009e.pdf
GreenProductSP8009EaS mHop Microelectronics C orp.Ver 1.5N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.5.0 @ VGS=10VSuface Mount Package.33V 24A6.5 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAXI
sp8009.pdf
GreenProductSP8009aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.6.0 @ VGS=10VSuface Mount Package.30V 24A7.2 @ VGS=6V Pin 1TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)SymbolP
sp8006.pdf
GreenProductSP8006aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.4.5 @ VGS=4.5VSuface Mount Package.4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V ESD Protected.5.5 @ VGS=3.1V6.0 @ VGS=2.5VD 5 4 GD 6 3S7 2D
sp8007.pdf
GreenProductSP8007aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.3.8 @ VGS=4.5VSuface Mount Package.3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V ESD Protected.5.1 @ VGS=3.1V5.9 @ VGS=2.5VD 5 4 GD 6 3S7 2D S
sp8005.pdf
GreenProductSP8005aS mHop Microelectronics C orp.Ver 2.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.3.5 @ VGS=4.5VSuface Mount Package.3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V ESD Protected.4.3 @ VGS=3.1V5.0 @ VGS=2.5VD 5 4 GD 6 3S7 2D S
sp8008.pdf
GreenProductSP8008aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.3.9 @ VGS=10VSuface Mount Package.30V 28A 4.2 @ VGS=4.5V ESD Protected.5.2 @ VGS=2.5V D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3
hsp8004.pdf
HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP8004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYPgate charge for most of the synchronous buck converter applications. I 175 A DThe HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
Datasheet: FDS6994S , SP8013 , FDS8447 , FDS8449 , FDS8449F085 , FDS86106 , SP8010E , FDS86140 , TK10A60D , FDS86141 , SP8005 , FDS86240 , FDS86242 , FDS86252 , FDS8638 , FDS8813NZ , SP632S .
History: SSD50N06-15D
History: SSD50N06-15D
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