SP8009EL - описание и поиск аналогов

Green Product SP8009EL a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 5.0 @ VGS=10V Suface Mount Package. 33V 24A 6.5 @ VGS=6V ESD Protected. D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3.3 ABSOLUTE MAX

Green Product SP8009E a S mHop Microelectronics C orp. Ver 1.5 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 5.0 @ VGS=10V Suface Mount Package. 33V 24A 6.5 @ VGS=6V ESD Protected. D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3.3 ABSOLUTE MAXI

Green Product SP8009 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 6.0 @ VGS=10V Suface Mount Package. 30V 24A 7.2 @ VGS=6V Pin 1 TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol P

Green Product SP8006 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 4.5 @ VGS=4.5V Suface Mount Package. 4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V ESD Protected. 5.5 @ VGS=3.1V 6.0 @ VGS=2.5V D 5 4 G D 6 3 S 7 2 D

Green Product SP8007 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 3.8 @ VGS=4.5V Suface Mount Package. 3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V ESD Protected. 5.1 @ VGS=3.1V 5.9 @ VGS=2.5V D 5 4 G D 6 3 S 7 2 D S

Green Product SP8005 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 3.5 @ VGS=4.5V Suface Mount Package. 3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V ESD Protected. 4.3 @ VGS=3.1V 5.0 @ VGS=2.5V D 5 4 G D 6 3 S 7 2 D S

Green Product SP8008 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 3.9 @ VGS=10V Suface Mount Package. 30V 28A 4.2 @ VGS=4.5V ESD Protected. 5.2 @ VGS=2.5V D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3

HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DS The HSP8004 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYP gate charge for most of the synchronous buck converter applications. I 175 A D The HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function