FDS8817NZ MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS8817NZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 335 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: SO-8
FDS8817NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS8817NZ Datasheet (PDF)
fds8817nz.pdf
November 2008FDS8817NZN-Channel PowerTrench MOSFET 30V, 15A, 7.0mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7m at VGS = 10V, ID = 15ASemiconductors advanced PowerTrench process that has Max rDS(on) = 10m at VGS = 4.5V, ID =12.6A been especially tailored to minimize the on-state resistance. HBM ESD protection leve
fds8817nz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds8812nz.pdf
November 2008FDS8812NZN-Channel PowerTrench MOSFET 30V, 20A, 4.0mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.0m at VGS = 10V, ID = 20ASemiconductors advanced PowerTrench process that has Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection
fds8813nz.pdf
November 2008FDS8813NZN-Channel PowerTrench MOSFET 30V, 18.5A, 4.5mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.5m at VGS = 10V, ID = 18.5ASemiconductors advanced PowerTrench process that has Max rDS(on) = 6.0m at VGS = 4.5V, ID =16A been especially tailored to minimize the on-state resistance. HBM ESD protect
fds8812nz.pdf
FDS8812NZwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STF2458
