FDS8817NZ Datasheet. Specs and Replacement

Type Designator: FDS8817NZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 335 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: SO-8

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FDS8817NZ datasheet

 ..1. Size:306K  fairchild semi
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FDS8817NZ

November 2008 FDS8817NZ N-Channel PowerTrench MOSFET 30V, 15A, 7.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7m at VGS = 10V, ID = 15A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 10m at VGS = 4.5V, ID =12.6A been especially tailored to minimize the on-state resistance. HBM ESD protection leve... See More ⇒

 ..2. Size:378K  onsemi
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FDS8817NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:446K  fairchild semi
 fds8812nz.pdf pdf_icon

FDS8817NZ

November 2008 FDS8812NZ N-Channel PowerTrench MOSFET 30V, 20A, 4.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.0m at VGS = 10V, ID = 20A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection ... See More ⇒

 8.2. Size:335K  fairchild semi
 fds8813nz.pdf pdf_icon

FDS8817NZ

November 2008 FDS8813NZ N-Channel PowerTrench MOSFET 30V, 18.5A, 4.5m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.5m at VGS = 10V, ID = 18.5A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 6.0m at VGS = 4.5V, ID =16A been especially tailored to minimize the on-state resistance. HBM ESD protect... See More ⇒

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Detailed specifications: FDS86141, SP8005, FDS86240, FDS86242, FDS86252, FDS8638, FDS8813NZ, SP632S, AON7506, SP4412, FDS8840NZ, FDS8842NZ, FDS8858CZ, SP4401, SP3906, FDS8870, SP3903

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