SP4412 Datasheet and Replacement
Type Designator: SP4412
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TSON3.3X3.3
SP4412 substitution
SP4412 Datasheet (PDF)
sp4412.pdf

GreenProductSP4412aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.19 @ VGS=10VSuface Mount Package.30V 16A31 @ VGS=4.5V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAXIM
wsp4410.pdf

WSP4410 N-Ch MOSFETGeneral Description Product SummeryThe WSP4410 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 30V 4m 20A charge for most of the synchronous buck converter applications . Applications The WSP4410 meet the RoHS and Green High Frequency Point-of-Load Synchronous Prod
Datasheet: SP8005 , FDS86240 , FDS86242 , FDS86252 , FDS8638 , FDS8813NZ , SP632S , FDS8817NZ , IRLZ44N , FDS8840NZ , FDS8842NZ , FDS8858CZ , SP4401 , SP3906 , FDS8870 , SP3903 , FDS8876 .
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