All MOSFET. FDS8880 Datasheet

 

FDS8880 Datasheet and Replacement


   Type Designator: FDS8880
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 11.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SO-8
 

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FDS8880 Datasheet (PDF)

 ..1. Size:620K  fairchild semi
 fds8880.pdf pdf_icon

FDS8880

April 2007tmFDS8880N-Channel PowerTrench MOSFET 30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized fo

 ..2. Size:564K  onsemi
 fds8880.pdf pdf_icon

FDS8880

FDS8880N-Channel PowerTrench MOSFET30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate charge

 8.1. Size:280K  fairchild semi
 fds8882.pdf pdf_icon

FDS8880

December 2008FDS8882N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 mFeatures General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 AThe FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o

 8.2. Size:305K  fairchild semi
 fds8884.pdf pdf_icon

FDS8880

February 2006FDS8884N-Channel PowerTrench MOSFET30V, 8.5A, 23mGeneral Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5Aeither synchronous or conventional switching PWM controllers. It has been opt

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Datasheet: SP4401 , SP3906 , FDS8870 , SP3903 , FDS8876 , SP3902 , FDS8878 , SP3901 , NCEP15T14 , SP3900 , FDS8882 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , FDS89141 .

Keywords - FDS8880 MOSFET datasheet

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