FDS8880 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDS8880
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 11.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 23 nC
Время нарастания (tr): 27 ns
Выходная емкость (Cd): 260 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm
Тип корпуса: SO-8
FDS8880 Datasheet (PDF)
fds8880.pdf
April 2007tmFDS8880N-Channel PowerTrench MOSFET 30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized fo
fds8880.pdf
FDS8880N-Channel PowerTrench MOSFET30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate charge
fds8882.pdf
December 2008FDS8882N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 mFeatures General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 AThe FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o
fds8884.pdf
February 2006FDS8884N-Channel PowerTrench MOSFET30V, 8.5A, 23mGeneral Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5Aeither synchronous or conventional switching PWM controllers. It has been opt
fds8884.pdf
February 2006FDS8884N-Channel PowerTrench MOSFET30V, 8.5A, 23mGeneral Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5Aeither synchronous or conventional switching PWM controllers. It has been opt
Другие MOSFET... SP4401 , SP3906 , FDS8870 , SP3903 , FDS8876 , SP3902 , FDS8878 , SP3901 , AON7506 , SP3900 , FDS8882 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , FDS89141 .
