All MOSFET. FDS8884 Datasheet

 

FDS8884 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS8884
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 2.5 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 8.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 9.2 nC
   Rise Time (tr): 9 nS
   Drain-Source Capacitance (Cd): 100 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm
   Package: SO-8

 FDS8884 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS8884 Datasheet (PDF)

 ..1. Size:305K  fairchild semi
 fds8884.pdf

FDS8884 FDS8884

February 2006FDS8884N-Channel PowerTrench MOSFET30V, 8.5A, 23mGeneral Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5Aeither synchronous or conventional switching PWM controllers. It has been opt

 ..2. Size:317K  onsemi
 fds8884.pdf

FDS8884 FDS8884

February 2006FDS8884N-Channel PowerTrench MOSFET30V, 8.5A, 23mGeneral Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5Aeither synchronous or conventional switching PWM controllers. It has been opt

 8.1. Size:280K  fairchild semi
 fds8882.pdf

FDS8884 FDS8884

December 2008FDS8882N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 mFeatures General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 AThe FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o

 8.2. Size:620K  fairchild semi
 fds8880.pdf

FDS8884 FDS8884

April 2007tmFDS8880N-Channel PowerTrench MOSFET 30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized fo

 8.3. Size:564K  onsemi
 fds8880.pdf

FDS8884 FDS8884

FDS8880N-Channel PowerTrench MOSFET30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate charge

Datasheet: FDS8876 , SP3902 , FDS8878 , SP3901 , FDS8880 , SP3900 , FDS8882 , SP2702 , STF13NM60N , SP2700 , FDS8896 , SP2458 , FDS89141 , SP2112 , FDS89161 , SP2110 , FDS89161LZ .

History: SSD50N06-15D

 

 
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