FDS8884 MOSFET Datasheet: N-Ch, 30V, 8.5A. Full specification with pinout and replacement list

FDS8884 Specs and Replacement

Type Designator: FDS8884

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SO-8

FDS8884 substitution

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FDS8884 datasheet

..1. Size:305K fairchild semi
fds8884.pdf pdf_icon

February 2006 FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been opt... See More ⇒

..2. Size:317K onsemi
fds8884.pdf pdf_icon

8.1. Size:280K fairchild semi
fds8882.pdf pdf_icon

December 2008 FDS8882 N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 m Features General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 A The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o... See More ⇒

8.2. Size:620K fairchild semi
fds8880.pdf pdf_icon

April 2007 tm FDS8880 N-Channel PowerTrench MOSFET 30V, 11.6A, 10m Features General Description rDS(on) = 10m , VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m , VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM controllers. It has been optimized fo... See More ⇒