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Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0885 3.16 0.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with 2SA0885 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25 C 0.75 0.1 0.5 0.1 Parameter Symbol Rating Unit 0.5 0.1 1.76 0.1 4.6 0.2 2.3 0.2 Collector-base voltage (Emitter open) VCBO 45 V 1 Emitter Collector-emitter voltage (Base open) VCEO 35 V 1 2 3 2 Collector 3 Base Emitter-base voltage (Collector open) VEBO 5 V TO-126B-A1 Package Collector current IC 1 A Peak collector current ICP 1.5 A Collector power dissipation PC 1.2 W 5.0 * Junction temperature Tj 150 C Storag... See More ⇒

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