2SJ258 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ258
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 60 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 60 ns
Выходная емкость (Cd): 780 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.095 Ohm
Тип корпуса: SMP
2SJ258 Datasheet (PDF)
2sj258.pdf
Ordering number:EN4745P-Channel Silicon MOSFET2SJ258Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SJ258] Surface mount type device making the following10.24.51.3possible. Reduction in the assembling time for 2SJ258-applied equipment. High-density
2sj256.pdf
Ordering number:EN4232P-Channel Silicon MOSFET2SJ256Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ256] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO
2sj259.pdf
Ordering number:EN4233P-Channel Silicon MOSFET2SJ259Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ259] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ259-applied equipment
2sj257.pdf
Ordering number:EN4242P-Channel Silicon MOSFET2SJ257Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ257] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ257-applied equipment
2sj254.pdf
Ordering number:EN4231P-Channel Silicon MOSFET2SJ254Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ254] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO
2sj255.pdf
Ordering number:EN4744P-Channel Silicon MOSFET2SJ255Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ255] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO
2sj256.pdf
isc P-Channel MOSFET Transistor 2SJ256DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIMUM RATINGS(
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: NCE65TF130T | LTP70N06P | HY3506B | HY3506P | DP3080 | CRSS035N10N | CRST037N10N | S85N16S | S85N16RP | S85N16RN | S85N16R | S85N048S | S85N042S | S85N042RP | S85N042RN | S85N042R