2SJ258 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ258
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 780 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
   Paquete / Cubierta: SMP

Búsqueda de reemplazo de MOSFET 2SJ258

2SJ258 Datasheet (PDF)

..1. Size:93K sanyo
2sj258.pdf

Ordering number:EN4745P-Channel Silicon MOSFET2SJ258Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SJ258] Surface mount type device making the following10.24.51.3possible. Reduction in the assembling time for 2SJ258-applied equipment. High-density

9.1. Size:92K sanyo
2sj256.pdf

Ordering number:EN4232P-Channel Silicon MOSFET2SJ256Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ256] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

9.2. Size:99K sanyo
2sj259.pdf

Ordering number:EN4233P-Channel Silicon MOSFET2SJ259Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ259] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ259-applied equipment

9.3. Size:96K sanyo
2sj257.pdf

Ordering number:EN4242P-Channel Silicon MOSFET2SJ257Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ257] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ257-applied equipment

9.4. Size:93K sanyo
2sj254.pdf

Ordering number:EN4231P-Channel Silicon MOSFET2SJ254Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ254] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

9.5. Size:92K sanyo
2sj255.pdf

Ordering number:EN4744P-Channel Silicon MOSFET2SJ255Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ255] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

9.6. Size:193K inchange semiconductor
2sj256.pdf

isc P-Channel MOSFET Transistor 2SJ256DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIMUM RATINGS(

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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