MOSFET. Справочник. Даташиты

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STU438S
  STU438S
  STU438S
  STU438S
 
STU438S
  STU438S
  STU438S
  STU438S
 
 
Список
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
MOSFET. Справочник. Даташиты. Основные параметры и характеристики. Поиск аналогов
 

STU438S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: STU438S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 42

Предельно допустимое напряжение сток-исток (Uds): 40

Предельно допустимое напряжение затвор-исток (Ugs): 20

Максимально допустимый постоянный ток стока (Id): 50

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf: 250

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 0.009

Тип корпуса: TO252_DPAK

Аналог (замена) для STU438S

STU438S PDF doc:

1.1. stu438s_std438s.pdf Size:112K _samhop

STU438S
STU438S
Gree r r P Pr Pr Pro STU/D438S a S mHop Microelectronics C orp. Ver 1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c IAS Single Pulse Avalanche Current A 23 c EAS mJ Single Pulse Avalanche Energy 132 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 175 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance,

4.1. stu438a_std438a.pdf Size:127K _samhop

STU438S
STU438S
Green Product STU/D438A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO251 Package. 40V 47A 11 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C A 47 a ID Drain Current-Continuous TC=70°C 38 A b IDM -Pulsed 138 A d EAS Sigle Pulse Avalanche Energy 169 mJ TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 °C/W JC a R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject to change wi

5.1. stu434s_std434s.pdf Size:123K _samhop

STU438S
STU438S
Green Product STU/D434S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9.2 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11.5 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c EAS mJ Single Pulse Avalanche Energy 91 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to c

5.2. stu435s_std435s.pdf Size:110K _samhop

STU438S
STU438S
Gr P Pr P P STU/D435S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 17.5 @ VGS=10V Suface Mount Package. -40V -38A 27 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Limit Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C A -38 ID Drain Current-Continuous -30.4 TC=70°C A a IDM -Pulsed -115 A c EAS Sigle Pulse Avalanche Energy 156 mJ TC=25°C 42 W PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case 3 °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change w

5.3. stu437s_std437s.pdf Size:128K _samhop

STU438S
STU438S
STU437S Green Product STD437S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 16 @ VGS=-10V Suface Mount Package. -40V -32A 30 @ VGS=-4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Units Limit VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C -32 A a e ID Drain Current-Continuous TC=70°C -25.6 A b IDM -Pulsed -94 A d EAS Sigle Pulse Avalanche Energy mJ 121 W TC=25°C 42 PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 3 °C/W JC R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject

5.4. stu432l_std432l.pdf Size:110K _samhop

STU438S
STU438S
Gre r r P Pr Pr Pro STU/D432L a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 10 @ VGS=10V TO-252 and TO251 Package. 40V 42A 15 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 42 A a ID Drain Current-Continuous TC=70°C 34 A b IDM A -Pulsed 123 d EAS mJ Single Pulse Avalanche Energy 121 TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 JC °C/W a R 50 JA Thermal Resistance, Junction-to-Ambient °C/W Details are subjec

5.5. stu432s_std432s.pdf Size:121K _samhop

STU438S
STU438S
Green Product STU/D432S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed d IAS Single Pulse Avalanche Current A 23 d EAS mJ Single Pulse Avalanche Energy 130 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R 3 JC Thermal Resistance, Junction-to-Case °C/W a R JA Thermal Resistance, Junct

Другие MOSFET... 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S , 2N7002VAC , 2N7002VC , IRF540N , BS870 , BSN20 , BSS138DW , STU438A , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV .

 

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