MOSFET. Справочник. Даташиты

Введите не менее 3 символов (только цифры или буквы)
 
2N7002W
  2N7002W
  2N7002W
 
2N7002W
  2N7002W
  2N7002W
 
2N7002W
  2N7002W
 
 
Список
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7316Q
AUIRF7319Q ..BF1105R
BF1105WR ..BLF548
BLF571 ..BSC022N03SG
BSC024NE2LS ..BSS138PW
BSS138W ..BUK663R5-55C
BUK663R7-75C ..BUK9506-55B
BUK9506-75B ..BUZ72A
BUZ73AH ..CED4311
CED540L ..CEP1186
CEP1195 ..CPH6442
CPH6443 ..DMP3020LSS
DMP3025LK3 ..FDA59N30
FDA69N25 ..FDD3680
FDD3682_F085 ..FDMA7672
FDMB3800N ..FDN308P
FDN327N ..FDR8305N
FDR8308P ..FDS9958
FDS9958_F085 ..FQB50N06L
FQB55N10 ..FQPF19N20
FQPF19N20C ..FRM430H
FRM430R ..H02N60SJ
H02N65E ..HAT1108C
HAT1110R ..HITK0203MP
HITK0204MP ..IPA60R160C6
IPA60R165CP ..IPB80N06S4-07
IPB80N06S4L-05 ..IPI45N06S4-09
IPI45N06S4L-08 ..IPP65R380E6
IPP65R600C6 ..IRF1404L
IRF1404S ..IRF6218
IRF6218S ..IRF7379
IRF7379I ..IRF8910G
IRF8915 ..IRFE110
IRFE120 ..IRFM250
IRFM340 ..IRFR111
IRFR120 ..IRFS620
IRFS620A ..IRFU4105
IRFU4105Z ..IRL521
IRL530 ..IRLSZ34A
IRLSZ44A ..IXFH12N100
IXFH12N100F ..IXFK33N50
IXFK34N80 ..IXFN80N50Q2
IXFN80N50Q3 ..IXFV12N120PS
IXFV12N80P ..IXTA1R4N120P
IXTA1R6N100D2 ..IXTH280N055T
IXTH28N50Q ..IXTP120N075T2
IXTP120P065T ..IXTQ75N10P
IXTQ76N25T ..J201
J202 ..KMB035N40DC
KMB050N60P ..KTK920BU
KTK920T ..MTB14P03Q8
MTB15P04J3 ..MTN15N50FP
MTN1634V8 ..MTP3N50E
MTP3N60 ..NDT452AP
NDT452P ..NTMS4800N
NTMS4801N ..PHP33N10
PHP33NQ20T ..PSMN026-80YS
PSMN027-100PS ..RD12MVP1
RD15HVF1 ..RJK0358DPA
RJK0358DSP ..RQ1C065UN
RQ1C075UN ..SDF044JAB-U
SDF054JAA-D ..SFR9214
SFR9220 ..SMG2339P
SMG2340N ..SML5040CN
SML5050AN ..SPD08N50C3
SPD08P06PG ..SSG4512CE
SSG4520H ..SSM3K15FV
SSM3K15TE ..SSP7460N
SSP7461P ..STB80NF55-08T4
STB80NF55L-06 ..STD8N06-1
STD8N06T4 ..STH85N15F4-2
STH8N80 ..STP15NM60ND
STP15NM65N ..STP5NA80
STP5NA80FI ..STU75N3LLH6
STU75N3LLH6-S ..TIS73
TIS74 ..TK8A45D
TK8A45DA ..TPCA8051-H
TPCA8052-H ..UT100N03-Q
UT108N03 ..WTC9435
WTD40N03 ..ZXMP10A18K
ZXMP2120E5 ..ZXMS6006SG
 
MOSFET. Справочник. Даташиты. Основные параметры и характеристики. Поиск аналогов
 

2N7002W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N7002W

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.2

Предельно допустимое напряжение сток-исток (Uds): 60

Предельно допустимое напряжение затвор-исток (Ugs): 20

Максимально допустимый постоянный ток стока (Id): 0.115

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf: 22

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 1.8

Тип корпуса: SOT323

Аналог (замена) для 2N7002W

2N7002W PDF doc:

1.1. 2n7002w.pdf Size:291K _fairchild_semi

2N7002W
2N7002W
February 2010 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking : 2N Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ? 1.0M? 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100C 73 mA Pulsed 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 ?C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 200 mW Derating above TA = 25C 1.6 mW/?C R?JA Thermal Resistance, Junction to Ambient * 625 ?C/W * Device mounted on FR-4 PCB, 1 i

1.2. 2n7002w.pdf Size:120K _diodes

2N7002W
2N7002W
2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low-On Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Finish - Matte Tin annealed over Alloy 42 Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Terminal Connections: See Diagram Lead Free/RoHS Compliant (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) SOT-323 Drain D Gate G S Source TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V

1.3. 2n7002w.pdf Size:182K _mcc

2N7002W
2N7002W
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N7002W Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Low ON-Resistance N-Channel Low Input Capacitance Low Gate Threshold Voltage Enhancement Mode Fast Switching Speed Field Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 SOT-323 A Mechanical Data D D Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 C B Terminal Connections: See Diagram G S Marking: K72 F E Maximum Ratings G H J Operating Temperature: -55Cto+150C Storage Temperature: -55Cto+150C K Maximum Thermal Resistance; 625K/W Junction To Ambient DIMENSIONS INCHES MM Parameter Symbol Value Unit DIM MIN MAX MIN MAX NOTE A .071 .087 1.80 2.20 B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 Drain-Source-Voltage VDSS 60 V D .026 Nominal 0.65Nominal E .04

1.4. 2n7002w.pdf Size:153K _utc

2N7002W
2N7002W
UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002WL-AL3-R 2N7002WG-AL3-R SOT-323 S G D Tape Reel MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-537.b 2N7002W Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 60 V DSS Drain-Gate Voltage (

1.5. s2n7002w.pdf Size:87K _secos

2N7002W
2N7002W
S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 ? N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ¦ Low on-resistance ¦ Low gate threshold voltage ¦ Low input capacitance ¦ Fast switching speed ¦ Low input/output leakage ¦ Ultra-small surface mount package A L 3 3 Top View C B 1 1 2 2 K E D PACKAGE INFORMATION H J F G Drain 3 Drain Drain 1 3 3 Gate 6C 72 2 1 1 2 2 Source Millimeter Millimeter Gate Gate Source Source REF. REF. Min. Max. Min. Max. X=Date Code A 1.80 2.20 G 0.00 0.10 B 2.00 2.40 H 0.425 REF. C 1.15 1.35 J 0.10 0.25 D 0.80 1.00 K - - E 1.20 1.40 L 0.650 TYP. F 0.30 0.40 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDDS 60 Vdc Drain-Gate Voltage(RGS=1.0M?) VDGR 60 Vdc Continuous Drain Current1 (TA=25°C) ±115 ID Continuous Drain Current1(TA=100°C) ±75 mAdc

1.6. 2n7002w.pdf Size:241K _lge

2N7002W
2N7002W
2N7002W Mosfet(N-Channel) SOT-323 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT VGS=0 V, ID=10 ?A 60 Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=3mA 60 V Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 ?A 1 2.5 Gate-body Leakage lGSS VDS=0 V, VGS=В±25 V В±100 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 ?A On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 mA VGS=10 V, ID=500 mA 7.5 Drain-Source

1.7. 2n7002w.pdf Size:359K _wietron

2N7002W
2N7002W
2N7002W N-Channel MOSFET 3 DRAIN 3 Features: 1 1 2 *Low On-Resistance : 7.5 ? GATE *Low Input Capacitance: 22PF SOT-323(SC-70) *Low Output Capacitance : 11PF 2 *Low Threshold Voltage :1 .5V(TYE) SOURCE *Fast Switching Speed : 7ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TA=25 C) ID 115 mA Power Dissipation (TA=25 C) PD 200 mW Maximax Junction-to-Ambient R ?JA 625 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7002W = 6C WEITRON http://www.weitron.com.tw 2N7002W Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static(1) Drain-Source Breakdown Voltage V(BR)DSS 60 70 - V VGS=0V, I =10 uA D Gate-Threshold Voltage VGS (th) 1.0 1.5 2.0 V VDS=V , I =-250uA GS D Gate-body Leakage IGSS +10 _ nA - - + _ VGS= 20V, VDS=0V Zero G

1.8. 2n7002wt1.pdf Size:368K _willas

2N7002W
2N7002W
FM120-M WILLAS THRU 2N7002WT1 115 mA, 60 V Small Signal MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N–Channel SOT–323 optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • We declare that the material of product • High scompliance with RoHS requirements. urge capability. • Guardring for overvoltage protection. • ESD Protected:1000V 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of SOT– 323 MIL-STD-19500 /228 • RoHS product for packing code suffix

Другие MOSFET... 2N7002(Z) , 2N7002A , 2N7002DW , 2N7002E , 2N7002K , 2N7002T , 2N7002VAC , 2N7002VC , IRF540N , BS870 , BSN20 , BSS138DW , BSS138W , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV .

(C) 2005 All Right reserved Биполярные || MOSFET || IGBT | | Производители | | SMD-коды | | Типы корпусов