MOSFET. Справочник. Даташиты

Введите не менее 3 символов (только цифры или буквы)
 
2N7002W
  2N7002W
  2N7002W
 
2N7002W
  2N7002W
  2N7002W
 
2N7002W
  2N7002W
 
 
Список
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3141
2SK3141-01 ..2SK3668
2SK3669 ..2SK523
2SK525 ..3N60K
3N60Z ..5N80
5N90 ..AP10N70W
AP10P10GH-HF ..AP2R803GH-HF
AP2R803GMT-HF ..AP4543GEH-HF
AP4543GEM-HF ..AP92T12GP-HF
AP92U03GH-HF ..AP98T07GP-HF
AP9918GJ ..APT10M11JVR
APT10M11LVR ..AUIRF3007
AUIRF3205 ..AUIRLR2908
AUIRLR3105 ..BLD6G22LS-50
BLF1043 ..BS170F
BS170P ..BSP75G
BSP75N ..BUK6510-75C
BUK652R0-30C ..BUK9107-55ATE
BUK9120-48TC ..BUZ41A
BUZ42 ..CED12N10L
CED12P10 ..CEP01N65
CEP01N6G ..CEUF640
CEV2306 ..DMP2066LSD
DMP2066LSN ..FCPF22N60NT
FCPF22N60NT ..FDD13AN06A0_F085
FDD14AN06LA0_F085 ..FDMA1032CZ
FDMA1032CZ ..FDMS86103L
FDMS86103L ..FDPF5N50NZF
FDPF5N50NZU ..FDS8958A_F085
FDS8958A_F085 ..FQB19N20L
FQB19N20L ..FQP8N80C
FQP8N80C ..FRL9130H
FRL9130R ..GWM120-0075X1-SL
GWM120-0075X1-SL ..HAT1040T
HAT1041T ..HAT3038R
HAT3040R ..IPA030N10N3G
IPA032N06N3G ..IPB80N03S4L-02
IPB80N03S4L-03 ..IPI100N04S3-03
IPI100N04S4-H2 ..IPP60R160C6
IPP60R165CP ..IRF1010EZL
IRF1010EZS ..IRF5806
IRF5810 ..IRF7321D2
IRF7322D1 ..IRF840A
IRF840A ..IRFBF20S
IRFBF30 ..IRFL014
IRFL014N ..IRFPE40
IRFPE50 ..IRFS453
IRFS4610 ..IRFU2405
IRFU2407 ..IRL3502S
IRL3705N ..IRLR8113
IRLR8256 ..IXFE39N90
IXFE44N50Q ..IXFK21N100F
IXFK21N100Q ..IXFN48N50
IXFN48N50Q ..IXFT68N20
IXFT69N30P ..IXTA140N055T2
IXTA140P05T ..IXTH20N60
IXTH20N60MA ..IXTN600N04T2
IXTN60N50L2 ..IXTQ32P20T
IXTQ36N30P ..IXTZ24N50MA
IXTZ24N50MB ..KHB9D0N90P1
KHB9D5N20D ..KTJ6131E
KTJ6131V ..NCV8402D
NCV8403 ..NTD4805N
NTD4806N ..NTTFS4932N
NTTFS4937N ..PHX3N40E
PHX3N50E ..PSMN2R0-60ES
PSMN2R0-60PS ..RFD12N06RLESM
RFD14N05 ..RJK0455DPB
RJK0456DPB ..RQK0606KGDQA
RQK0607AQDQS ..SDF1NA60JAA
SDF1NA60JAB ..SFW9610
SFW9614 ..SMK0825FZ
SMK0850F ..SML6045BN
SML6045HN ..SPP08N50C3
SPP08N80C3 ..SSH20N45
SSH20N45A ..SSM5P05FU
SSM5P15FU ..SSS5N90A
SSS6N55 ..STD13NM60N
STD14NM50N ..STE50N40
STE53NA50 ..STK12N05L
STK12N06L ..STP20NM60
STP20NM60FD ..STP75N3LLH6
STP75NF20 ..STW12N60
STW12NA50 ..TK12X60U
TK130F06K3 ..TPC8010-H
TPC8012-H ..TPCC8006-H
TPCC8007 ..UT3P06
UT40N03 ..ZVN3310A
ZVN3310F ..ZXMS6006SG
 
MOSFET. Справочник. Даташиты. Основные параметры и характеристики. Поиск аналогов
 

2N7002W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N7002W

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.2

Предельно допустимое напряжение сток-исток (Uds): 60

Предельно допустимое напряжение затвор-исток (Ugs): 20

Максимально допустимый постоянный ток стока (Id): 0.115

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf: 22

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 1.8

Тип корпуса: SOT323

Аналог (замена) для 2N7002W

2N7002W PDF doc:

1.1. 2n7002w.pdf Size:291K _fairchild_semi

2N7002W
2N7002W
February 2010 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking : 2N Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ? 1.0M? 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100C 73 mA Pulsed 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 ?C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 200 mW Derating above TA = 25C 1.6 mW/?C R?JA Thermal Resistance, Junction to Ambient * 625 ?C/W * Device mounted on FR-4 PCB, 1 i

1.2. 2n7002w.pdf Size:120K _diodes

2N7002W
2N7002W
2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low-On Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Finish - Matte Tin annealed over Alloy 42 Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Terminal Connections: See Diagram Lead Free/RoHS Compliant (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) SOT-323 Drain D Gate G S Source TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V

1.3. 2n7002w.pdf Size:182K _mcc

2N7002W
2N7002W
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N7002W Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Low ON-Resistance N-Channel Low Input Capacitance Low Gate Threshold Voltage Enhancement Mode Fast Switching Speed Field Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 SOT-323 A Mechanical Data D D Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 C B Terminal Connections: See Diagram G S Marking: K72 F E Maximum Ratings G H J Operating Temperature: -55Cto+150C Storage Temperature: -55Cto+150C K Maximum Thermal Resistance; 625K/W Junction To Ambient DIMENSIONS INCHES MM Parameter Symbol Value Unit DIM MIN MAX MIN MAX NOTE A .071 .087 1.80 2.20 B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 Drain-Source-Voltage VDSS 60 V D .026 Nominal 0.65Nominal E .04

1.4. 2n7002w.pdf Size:153K _utc

2N7002W
2N7002W
UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002WL-AL3-R 2N7002WG-AL3-R SOT-323 S G D Tape Reel MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-537.b 2N7002W Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 60 V DSS Drain-Gate Voltage (

1.5. s2n7002w.pdf Size:87K _secos

2N7002W
2N7002W
S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 ? N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ¦ Low on-resistance ¦ Low gate threshold voltage ¦ Low input capacitance ¦ Fast switching speed ¦ Low input/output leakage ¦ Ultra-small surface mount package A L 3 3 Top View C B 1 1 2 2 K E D PACKAGE INFORMATION H J F G Drain 3 Drain Drain 1 3 3 Gate 6C 72 2 1 1 2 2 Source Millimeter Millimeter Gate Gate Source Source REF. REF. Min. Max. Min. Max. X=Date Code A 1.80 2.20 G 0.00 0.10 B 2.00 2.40 H 0.425 REF. C 1.15 1.35 J 0.10 0.25 D 0.80 1.00 K - - E 1.20 1.40 L 0.650 TYP. F 0.30 0.40 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDDS 60 Vdc Drain-Gate Voltage(RGS=1.0M?) VDGR 60 Vdc Continuous Drain Current1 (TA=25°C) ±115 ID Continuous Drain Current1(TA=100°C) ±75 mAdc

1.6. 2n7002w.pdf Size:241K _lge

2N7002W
2N7002W
2N7002W Mosfet(N-Channel) SOT-323 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT VGS=0 V, ID=10 ?A 60 Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=3mA 60 V Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 ?A 1 2.5 Gate-body Leakage lGSS VDS=0 V, VGS=В±25 V В±100 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 ?A On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 mA VGS=10 V, ID=500 mA 7.5 Drain-Source

1.7. 2n7002w.pdf Size:359K _wietron

2N7002W
2N7002W
2N7002W N-Channel MOSFET 3 DRAIN 3 Features: 1 1 2 *Low On-Resistance : 7.5 ? GATE *Low Input Capacitance: 22PF SOT-323(SC-70) *Low Output Capacitance : 11PF 2 *Low Threshold Voltage :1 .5V(TYE) SOURCE *Fast Switching Speed : 7ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TA=25 C) ID 115 mA Power Dissipation (TA=25 C) PD 200 mW Maximax Junction-to-Ambient R ?JA 625 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7002W = 6C WEITRON http://www.weitron.com.tw 2N7002W Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static(1) Drain-Source Breakdown Voltage V(BR)DSS 60 70 - V VGS=0V, I =10 uA D Gate-Threshold Voltage VGS (th) 1.0 1.5 2.0 V VDS=V , I =-250uA GS D Gate-body Leakage IGSS +10 _ nA - - + _ VGS= 20V, VDS=0V Zero G

1.8. 2n7002wt1.pdf Size:368K _willas

2N7002W
2N7002W
FM120-M WILLAS THRU 2N7002WT1 115 mA, 60 V Small Signal MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N–Channel SOT–323 optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • We declare that the material of product • High scompliance with RoHS requirements. urge capability. • Guardring for overvoltage protection. • ESD Protected:1000V 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of SOT– 323 MIL-STD-19500 /228 • RoHS product for packing code suffix

Другие MOSFET... 2N7002(Z) , 2N7002A , 2N7002DW , 2N7002E , 2N7002K , 2N7002T , 2N7002VAC , 2N7002VC , IRF540N , BS870 , BSN20 , BSS138DW , BSS138W , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV .

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