MOSFET. Справочник. Даташиты

Введите не менее 3 символов (только цифры или буквы)
 
2N7002W
  2N7002W
  2N7002W
 
2N7002W
  2N7002W
  2N7002W
 
2N7002W
  2N7002W
 
 
Список
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NTB5405N
NTB5426N ..NTP6411AN
NTP6412AN ..PHP6ND50E
PHP79NQ08LT ..PSMN085-150K
PSMN0R9-25YLC ..RF1S25N06SM
RF1S30N06LESM ..RJK03B8DPA
RJK03B9DPA ..RQJ0301HGDQS
RQJ0302NGDQA ..SDF120JAB-D
SDF120JAB-S ..SFT1345
SFT1350 ..SMG5403
SMG5406 ..SML50J77
SML50L37 ..SPI11N65C3
SPI12N50C3 ..SSG4934N
SSG4935P ..SSM3K35FS
SSM3K35MFV ..SSR1N60A
SSR2N60A ..STD10NM50N
STD10NM60N ..STE100N20
STE140NF20D ..STI23NM60ND
STI24NM60N ..STP18NM80
STP190N55LF3 ..STP60NF06L
STP60NF10 ..STV40N10
STV4N100 ..TK100F04K3
TK100F04K3L ..TPC6006-H
TPC6007-H ..TPCA8088
TPCA8101 ..UT2327
UT2955 ..WTN9575
WTN9973 ..ZXMP6A16K
ZXMP6A17DN8 ..ZXMS6006SG
 
MOSFET. Справочник. Даташиты. Основные параметры и характеристики. Поиск аналогов
 

2N7002W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N7002W

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.2

Предельно допустимое напряжение сток-исток (Uds): 60

Предельно допустимое напряжение затвор-исток (Ugs): 20

Максимально допустимый постоянный ток стока (Id): 0.115

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf: 22

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 1.8

Тип корпуса: SOT323

Аналог (замена) для 2N7002W

2N7002W PDF doc:

1.1. 2n7002w.pdf Size:291K _fairchild_semi

2N7002W
2N7002W
February 2010 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking : 2N Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ? 1.0M? 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100C 73 mA Pulsed 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 ?C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 200 mW Derating above TA = 25C 1.6 mW/?C R?JA Thermal Resistance, Junction to Ambient * 625 ?C/W * Device mounted on FR-4 PCB, 1 i

1.2. 2n7002w.pdf Size:120K _diodes

2N7002W
2N7002W
2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low-On Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Finish - Matte Tin annealed over Alloy 42 Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Terminal Connections: See Diagram Lead Free/RoHS Compliant (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) SOT-323 Drain D Gate G S Source TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V

1.3. 2n7002w.pdf Size:182K _mcc

2N7002W
2N7002W
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N7002W Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Low ON-Resistance N-Channel Low Input Capacitance Low Gate Threshold Voltage Enhancement Mode Fast Switching Speed Field Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 SOT-323 A Mechanical Data D D Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 C B Terminal Connections: See Diagram G S Marking: K72 F E Maximum Ratings G H J Operating Temperature: -55Cto+150C Storage Temperature: -55Cto+150C K Maximum Thermal Resistance; 625K/W Junction To Ambient DIMENSIONS INCHES MM Parameter Symbol Value Unit DIM MIN MAX MIN MAX NOTE A .071 .087 1.80 2.20 B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 Drain-Source-Voltage VDSS 60 V D .026 Nominal 0.65Nominal E .04

1.4. 2n7002w.pdf Size:153K _utc

2N7002W
2N7002W
UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002WL-AL3-R 2N7002WG-AL3-R SOT-323 S G D Tape Reel MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-537.b 2N7002W Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 60 V DSS Drain-Gate Voltage (

1.5. s2n7002w.pdf Size:87K _secos

2N7002W
2N7002W
S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 ? N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ¦ Low on-resistance ¦ Low gate threshold voltage ¦ Low input capacitance ¦ Fast switching speed ¦ Low input/output leakage ¦ Ultra-small surface mount package A L 3 3 Top View C B 1 1 2 2 K E D PACKAGE INFORMATION H J F G Drain 3 Drain Drain 1 3 3 Gate 6C 72 2 1 1 2 2 Source Millimeter Millimeter Gate Gate Source Source REF. REF. Min. Max. Min. Max. X=Date Code A 1.80 2.20 G 0.00 0.10 B 2.00 2.40 H 0.425 REF. C 1.15 1.35 J 0.10 0.25 D 0.80 1.00 K - - E 1.20 1.40 L 0.650 TYP. F 0.30 0.40 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDDS 60 Vdc Drain-Gate Voltage(RGS=1.0M?) VDGR 60 Vdc Continuous Drain Current1 (TA=25°C) ±115 ID Continuous Drain Current1(TA=100°C) ±75 mAdc

1.6. 2n7002w.pdf Size:241K _lge

2N7002W
2N7002W
2N7002W Mosfet(N-Channel) SOT-323 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT VGS=0 V, ID=10 ?A 60 Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=3mA 60 V Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 ?A 1 2.5 Gate-body Leakage lGSS VDS=0 V, VGS=В±25 V В±100 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 ?A On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 mA VGS=10 V, ID=500 mA 7.5 Drain-Source

1.7. 2n7002w.pdf Size:359K _wietron

2N7002W
2N7002W
2N7002W N-Channel MOSFET 3 DRAIN 3 Features: 1 1 2 *Low On-Resistance : 7.5 ? GATE *Low Input Capacitance: 22PF SOT-323(SC-70) *Low Output Capacitance : 11PF 2 *Low Threshold Voltage :1 .5V(TYE) SOURCE *Fast Switching Speed : 7ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TA=25 C) ID 115 mA Power Dissipation (TA=25 C) PD 200 mW Maximax Junction-to-Ambient R ?JA 625 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7002W = 6C WEITRON http://www.weitron.com.tw 2N7002W Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static(1) Drain-Source Breakdown Voltage V(BR)DSS 60 70 - V VGS=0V, I =10 uA D Gate-Threshold Voltage VGS (th) 1.0 1.5 2.0 V VDS=V , I =-250uA GS D Gate-body Leakage IGSS +10 _ nA - - + _ VGS= 20V, VDS=0V Zero G

1.8. 2n7002wt1.pdf Size:368K _willas

2N7002W
2N7002W
FM120-M WILLAS THRU 2N7002WT1 115 mA, 60 V Small Signal MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N–Channel SOT–323 optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • We declare that the material of product • High scompliance with RoHS requirements. urge capability. • Guardring for overvoltage protection. • ESD Protected:1000V 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of SOT– 323 MIL-STD-19500 /228 • RoHS product for packing code suffix

Другие MOSFET... 2N7002(Z) , 2N7002A , 2N7002DW , 2N7002E , 2N7002K , 2N7002T , 2N7002VAC , 2N7002VC , IRF540N , BS870 , BSN20 , BSS138DW , BSS138W , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV .

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