MOSFET. Справочник. Даташиты

Введите не менее 3 символов (только цифры или буквы)
 
STU438S
  STU438S
  STU438S
  STU438S
 
STU438S
  STU438S
  STU438S
  STU438S
 
 
Список
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1501
2SK1502 ..2SK2132
2SK2133 ..2SK2719
2SK2723 ..2SK3114
2SK3115 ..2SK3564
2SK3565 ..2SK4171
2SK4177 ..3LP01M
3LP01S ..40600
40601 ..AO4480
AO4482 ..AOC2411
AOC2412 ..AON2405
AON2406 ..AON7538
AON7544 ..AOTF9N50
AOTF9N70 ..AP1332GEV-HF
AP1333GU ..AP30P10GI
AP30P10GP-HF ..AP4569GD
AP4569GH ..AP92U03GS-HF
AP93T03AGMT-HF ..AP9924AGO-HF
AP9924GO ..APT1004R2AN
APT1004R2BN ..APT5040CNR
APT50M38JFLL ..AUIRF3007
AUIRF3205 ..AUIRLR2908
AUIRLR3105 ..BLD6G22LS-50
BLF1043 ..BS870
BSB012N03LX3G ..BSR315P
BSR316P ..BUK652R0-30C
BUK652R1-30C ..BUK9120-48TC
BUK9207-30B ..BUZ42
BUZ45 ..CED11P20
CED12N10 ..CEN2301
CEN7002A ..CEU95P04
CEUF634 ..DMP2035UTS
DMP2066LDM ..FCP25N60N_F102
FCP260N60E ..FDC637BNZ
FDC638APZ ..FDI045N10A_F102
FDI150N10 ..FDMS7560S
FDMS7570S ..FDP8030L
FDP80N06 ..FDS8878
FDS8880 ..FQAF16N50
FQB10N50CFTM ..FQPF2N60C
FQPF2N70 ..FRS230D
FRS230H ..H5N1506P
H5N2001LD ..HAT2058R
HAT2061R ..HUF75329D3S
HUF75329G3 ..IPB015N04LG
IPB015N04NG ..IPD105N03LG
IPD105N04LG ..IPI70N10S3L-12
IPI70N10SL-16 ..IPP80N06S4L-05
IPP80N06S4L-07 ..IRF240
IRF250 ..IRF640FI
IRF640L ..IRF7420
IRF7421D1 ..IRF9521
IRF9522 ..IRFF420
IRFF430 ..IRFP048N
IRFP054 ..IRFR24N15D
IRFR2607Z ..IRFS730A
IRFS731 ..IRFU9212
IRFU9214 ..IRL6342
IRL6372 ..IRLU3103
IRLU3105 ..IXFH150N17T2
IXFH15N100 ..IXFK50N50
IXFK520N075T2 ..IXFP4N100PM
IXFP4N100Q ..IXFV26N60PS
IXFV30N50P ..IXTA28P065T
IXTA2N100 ..IXTH36P15P
IXTH39N08MA ..IXTP180N10T
IXTP182N055T ..IXTT10N100D
IXTT10N100D2 ..JANSR2N7401
JANSR2N7402 ..KMB4D8DN55Q
KMB5D0NP40Q ..KU2303K
KU2303Q ..MTB25P06FP
MTB2P50E ..MTN2310M3
MTN2310N3 ..MTP452M3
MTP4835AQ8 ..NTB5426N
NTB5605P ..NTP6412AN
NTP6413AN ..PHP79NQ08LT
PHP7N60E ..PSMN0R9-25YLC
PSMN102-200Y ..RF1S30N06LESM
RF1S30P05SM ..RJK03B9DPA
RJK03C0DPA ..RQJ0302NGDQA
RQJ0303PGDQA ..SDF054JAB-D
SDF054JAB-S ..SFP9610
SFP9614 ..SMG1330N
SMG2301 ..SML4080BN
SML4080CN ..SPA02N80C3
SPA03N60C3 ..SSD45N03
SSD50N06-15D ..SSM3J14T
SSM3J15CT ..SSM6N37FU
SSM6N39TU ..STB160NF3LL
STB16N65M5 ..STD2NK90Z-1
STD30NF03L ..STF2454
STF2454A ..STK4N30L
STK4N40 ..STP13N10LFI
STP13N95K3 ..STP55N05L
STP55N05LFI ..STS3429
STS3620 ..STU601S
STU6025NL ..TA75309
TA75321 ..TK75A06K3
TK75J04K3Z ..TPCA8025
TPCA8026 ..UK2996
UK3018 ..VN10KM
VN10LF ..ZXMN6A09G
ZXMN6A09K ..ZXMS6006SG
 
MOSFET. Справочник. Даташиты. Основные параметры и характеристики. Поиск аналогов
 

STU438S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: STU438S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 42

Предельно допустимое напряжение сток-исток (Uds): 40

Предельно допустимое напряжение затвор-исток (Ugs): 20

Максимально допустимый постоянный ток стока (Id): 50

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf: 250

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 0.009

Тип корпуса: TO252_DPAK

Аналог (замена) для STU438S

STU438S PDF doc:

1.1. stu438s_std438s.pdf Size:112K _samhop

STU438S
STU438S
Gree r r P Pr Pr Pro STU/D438S a S mHop Microelectronics C orp. Ver 1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c IAS Single Pulse Avalanche Current A 23 c EAS mJ Single Pulse Avalanche Energy 132 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 175 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance,

4.1. stu438a_std438a.pdf Size:127K _samhop

STU438S
STU438S
Green Product STU/D438A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO251 Package. 40V 47A 11 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C A 47 a ID Drain Current-Continuous TC=70°C 38 A b IDM -Pulsed 138 A d EAS Sigle Pulse Avalanche Energy 169 mJ TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 °C/W JC a R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject to change wi

5.1. stu434s_std434s.pdf Size:123K _samhop

STU438S
STU438S
Green Product STU/D434S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9.2 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11.5 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c EAS mJ Single Pulse Avalanche Energy 91 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to c

5.2. stu435s_std435s.pdf Size:110K _samhop

STU438S
STU438S
Gr P Pr P P STU/D435S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 17.5 @ VGS=10V Suface Mount Package. -40V -38A 27 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Limit Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C A -38 ID Drain Current-Continuous -30.4 TC=70°C A a IDM -Pulsed -115 A c EAS Sigle Pulse Avalanche Energy 156 mJ TC=25°C 42 W PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case 3 °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change w

5.3. stu437s_std437s.pdf Size:128K _samhop

STU438S
STU438S
STU437S Green Product STD437S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 16 @ VGS=-10V Suface Mount Package. -40V -32A 30 @ VGS=-4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Units Limit VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C -32 A a e ID Drain Current-Continuous TC=70°C -25.6 A b IDM -Pulsed -94 A d EAS Sigle Pulse Avalanche Energy mJ 121 W TC=25°C 42 PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 3 °C/W JC R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject

5.4. stu432l_std432l.pdf Size:110K _samhop

STU438S
STU438S
Gre r r P Pr Pr Pro STU/D432L a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 10 @ VGS=10V TO-252 and TO251 Package. 40V 42A 15 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 42 A a ID Drain Current-Continuous TC=70°C 34 A b IDM A -Pulsed 123 d EAS mJ Single Pulse Avalanche Energy 121 TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 JC °C/W a R 50 JA Thermal Resistance, Junction-to-Ambient °C/W Details are subjec

5.5. stu432s_std432s.pdf Size:121K _samhop

STU438S
STU438S
Green Product STU/D432S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed d IAS Single Pulse Avalanche Current A 23 d EAS mJ Single Pulse Avalanche Energy 130 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R 3 JC Thermal Resistance, Junction-to-Case °C/W a R JA Thermal Resistance, Junct

Другие MOSFET... 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S , 2N7002VAC , 2N7002VC , IRF540N , BS870 , BSN20 , BSS138DW , STU438A , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV .

 

(C) 2005 All Right reserved Биполярные || MOSFET || IGBT | | Производители | | SMD-коды | | Типы корпусов