MOSFET. Справочник. Даташиты

Введите не менее 3 символов (только цифры или буквы)
 
2N7002W
  2N7002W
  2N7002W
 
2N7002W
  2N7002W
  2N7002W
 
2N7002W
  2N7002W
 
 
Список
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP18T10GH-HF
AP18T10GI ..AP4036AGYT-HF
AP4085I ..AP55T06GS-HF
AP55T10GH-HF ..AP9450GYT-HF
AP9451GG-HF ..AP9970GK-HF
AP9970GP-HF ..APT40M35PVR
APT40M42JN ..AUIRFB3206
AUIRFB3207 ..BF1208
BF1208D ..BLF6G15L-500H
BLF6G15LS-500H ..BSC052N03LS
BSC052N03SG ..BSS84L
BSS84LT1 ..BUK7215-55A
BUK72150-55A ..BUK9520-55
BUK9520-55A ..BUZ902DP
BUZ902P ..CEDF634
CEDF640 ..CEP3100
CEP3120 ..DMC4028SSD
DMC4040SSD ..EC3A04B
EC4401C ..FDB120N10
FDB12N50F ..FDD5N50
FDD5N50F ..FDMC7660
FDMC7660 ..FDP025N06
FDP030N06 ..FDS3992
FDS3992 ..FDV305N
FDY1002PZ ..FQD12P10TM_F085
FQD13N06 ..FQPF5N40
FQPF5N40 ..FRS140D
FRS140H ..H12N65F
H2301N ..HAT2033R
HAT2036R ..HUF75307D3
HUF75307D3S ..IPA65R600E6
IPA65R660CFD ..IPD068P03L3G
IPD075N03LG ..IPI60R385CP
IPI60R520CP ..IPP80N06S2-09
IPP80N06S2-H5 ..IRF1607
IRF1902 ..IRF635
IRF636A ..IRF7416Q
IRF741FI ..IRF9520N
IRF9520NL ..IRFF310
IRFF320 ..IRFP044
IRFP044N ..IRFR224A
IRFR2307Z ..IRFS721
IRFS722 ..IRFU9120N
IRFU9121 ..IRL630S
IRL631 ..IRLU2908
IRLU3103 ..IXFH150N17T
IXFH150N17T2 ..IXFK48N60Q3
IXFK50N50 ..IXFP4N100P
IXFP4N100PM ..IXFV26N60P
IXFV26N60PS ..IXTA26P20P
IXTA28P065T ..IXTH36P10
IXTH36P15P ..IXTP180N085T
IXTP180N10T ..IXTT100N25P
IXTT10N100D ..JANSR2N7402
JANSR2N7403 ..KMB6D0DN30QA
KMB6D0DN30QB ..KU2307K
KU2307Q ..MTB30N06J3
MTB30N06Q8 ..MTN2328N3
MTN2342N3 ..MTP4835V8
MTP50P03HDL ..NTB5605P
NTB60N06 ..NTP6413AN
NTR0202PL ..PHP7N60E
PHP80N06LT ..PSMN102-200Y
PSMN130-200D ..RF1S30P05SM
RF1S30P06SM ..RJK03C0DPA
RJK03C1DPB ..RQJ0303PGDQA
RQJ0304DQDQA ..SDF120JAB-U
SDF120JDA-D ..SFT1423
SFT1431 ..SMG5409
SMK0160 ..SML50L47
SML50M60BFN ..SPI15N60C3
SPI15N60CFD ..SSG4940N
SSG4940NC ..SSM3K36FS
SSM3K36MFV ..SSR3055A
SSR3055LA ..STD10NM60ND
STD10NM65N ..STE150N10
STE15N100 ..STI24NM65N
STI26NM60N ..STP19N06
STP19N06FI ..STP60NS04ZB
STP62NS04Z ..STV4NA60
STV4NA80 ..TK100F06K3
TK10A50D ..TPC6008-H
TPC6009-H ..TPCA8102
TPCA8103 ..UT2N10
UT3006 ..WTU1333
WTX1012 ..ZXMP6A17E6
ZXMP6A17G ..ZXMS6006SG
 
MOSFET. Справочник. Даташиты. Основные параметры и характеристики. Поиск аналогов
 

2N7002W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N7002W

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.2

Предельно допустимое напряжение сток-исток (Uds): 60

Предельно допустимое напряжение затвор-исток (Ugs): 20

Максимально допустимый постоянный ток стока (Id): 0.115

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf: 22

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 1.8

Тип корпуса: SOT323

Аналог (замена) для 2N7002W

2N7002W PDF doc:

1.1. 2n7002w.pdf Size:291K _fairchild_semi

2N7002W
2N7002W
February 2010 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking : 2N Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ? 1.0M? 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100C 73 mA Pulsed 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 ?C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 200 mW Derating above TA = 25C 1.6 mW/?C R?JA Thermal Resistance, Junction to Ambient * 625 ?C/W * Device mounted on FR-4 PCB, 1 i

1.2. 2n7002w.pdf Size:120K _diodes

2N7002W
2N7002W
2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low-On Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Finish - Matte Tin annealed over Alloy 42 Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Terminal Connections: See Diagram Lead Free/RoHS Compliant (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) SOT-323 Drain D Gate G S Source TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V

1.3. 2n7002w.pdf Size:182K _mcc

2N7002W
2N7002W
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N7002W Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Low ON-Resistance N-Channel Low Input Capacitance Low Gate Threshold Voltage Enhancement Mode Fast Switching Speed Field Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 SOT-323 A Mechanical Data D D Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 C B Terminal Connections: See Diagram G S Marking: K72 F E Maximum Ratings G H J Operating Temperature: -55Cto+150C Storage Temperature: -55Cto+150C K Maximum Thermal Resistance; 625K/W Junction To Ambient DIMENSIONS INCHES MM Parameter Symbol Value Unit DIM MIN MAX MIN MAX NOTE A .071 .087 1.80 2.20 B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 Drain-Source-Voltage VDSS 60 V D .026 Nominal 0.65Nominal E .04

1.4. 2n7002w.pdf Size:153K _utc

2N7002W
2N7002W
UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002WL-AL3-R 2N7002WG-AL3-R SOT-323 S G D Tape Reel MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-537.b 2N7002W Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 60 V DSS Drain-Gate Voltage (

1.5. s2n7002w.pdf Size:87K _secos

2N7002W
2N7002W
S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 ? N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ¦ Low on-resistance ¦ Low gate threshold voltage ¦ Low input capacitance ¦ Fast switching speed ¦ Low input/output leakage ¦ Ultra-small surface mount package A L 3 3 Top View C B 1 1 2 2 K E D PACKAGE INFORMATION H J F G Drain 3 Drain Drain 1 3 3 Gate 6C 72 2 1 1 2 2 Source Millimeter Millimeter Gate Gate Source Source REF. REF. Min. Max. Min. Max. X=Date Code A 1.80 2.20 G 0.00 0.10 B 2.00 2.40 H 0.425 REF. C 1.15 1.35 J 0.10 0.25 D 0.80 1.00 K - - E 1.20 1.40 L 0.650 TYP. F 0.30 0.40 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDDS 60 Vdc Drain-Gate Voltage(RGS=1.0M?) VDGR 60 Vdc Continuous Drain Current1 (TA=25°C) ±115 ID Continuous Drain Current1(TA=100°C) ±75 mAdc

1.6. 2n7002w.pdf Size:241K _lge

2N7002W
2N7002W
2N7002W Mosfet(N-Channel) SOT-323 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT VGS=0 V, ID=10 ?A 60 Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=3mA 60 V Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 ?A 1 2.5 Gate-body Leakage lGSS VDS=0 V, VGS=В±25 V В±100 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 ?A On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 mA VGS=10 V, ID=500 mA 7.5 Drain-Source

1.7. 2n7002w.pdf Size:359K _wietron

2N7002W
2N7002W
2N7002W N-Channel MOSFET 3 DRAIN 3 Features: 1 1 2 *Low On-Resistance : 7.5 ? GATE *Low Input Capacitance: 22PF SOT-323(SC-70) *Low Output Capacitance : 11PF 2 *Low Threshold Voltage :1 .5V(TYE) SOURCE *Fast Switching Speed : 7ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TA=25 C) ID 115 mA Power Dissipation (TA=25 C) PD 200 mW Maximax Junction-to-Ambient R ?JA 625 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7002W = 6C WEITRON http://www.weitron.com.tw 2N7002W Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static(1) Drain-Source Breakdown Voltage V(BR)DSS 60 70 - V VGS=0V, I =10 uA D Gate-Threshold Voltage VGS (th) 1.0 1.5 2.0 V VDS=V , I =-250uA GS D Gate-body Leakage IGSS +10 _ nA - - + _ VGS= 20V, VDS=0V Zero G

1.8. 2n7002wt1.pdf Size:368K _willas

2N7002W
2N7002W
FM120-M WILLAS THRU 2N7002WT1 115 mA, 60 V Small Signal MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N–Channel SOT–323 optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • We declare that the material of product • High scompliance with RoHS requirements. urge capability. • Guardring for overvoltage protection. • ESD Protected:1000V 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of SOT– 323 MIL-STD-19500 /228 • RoHS product for packing code suffix

Другие MOSFET... 2N7002(Z) , 2N7002A , 2N7002DW , 2N7002E , 2N7002K , 2N7002T , 2N7002VAC , 2N7002VC , IRF540N , BS870 , BSN20 , BSS138DW , BSS138W , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV .

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