MOSFET. Справочник. Даташиты

Введите не менее 3 символов (только цифры или буквы)
 
STU438S
  STU438S
  STU438S
 
STU438S
  STU438S
  STU438S
 
STU438S
  STU438S
 
 
Список
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF400N80Z
FCPF600N60Z ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA905P
FDMA908PZ ..FDMS8570SDC
FDMS86101 ..FDPF20N50FT
FDPF20N50T ..FDT86256
FDU3N40 ..FQD17P06
FQD18N20V2 ..FQU11P06
FQU12N20 ..FSF9150D
FSF9150R ..H7N0307AB
H7N0307LD ..HAT2170N
HAT2171H ..HUF76107D3S
HUF76107P3 ..IPB097N08N3G
IPB100N04S2-04 ..IPD50N06S2L-14
IPD50N06S4-09 ..IPP04CN10NG
IPP04N03LBG ..IPW60R190E6
IPW60R199CP ..IRF3707ZS
IRF3708 ..IRF6674
IRF6678 ..IRF7663
IRF7665S2 ..IRF9Z30
IRF9Z32 ..IRFHM830D
IRFHM831 ..IRFP264
IRFP2907 ..IRFR9214
IRFR9220 ..IRFS9622
IRFS9623 ..IRFY9240
IRFY9240C ..IRLI630A
IRLI630G ..IRLZ44NL
IRLZ44NS ..IXFH32N50Q
IXFH340N075T2 ..IXFM13N50
IXFM13N80 ..IXFR30N60P
IXFR32N100P ..IXFX320N17T2
IXFX32N100P ..IXTA90N055T2
IXTA90N075T2 ..IXTH76N25T
IXTH76P10T ..IXTP3N60P
IXTP42N15T ..IXTT96N15P
IXTT96N20P ..KF5N50DZ
KF5N50F ..KP509B9
KP509V9 ..MEM610
MEM614 ..MTC380Q8
MTC4501Q8 ..MTN4410V8
MTN4424Q8 ..NDB7051L
NDB7052 ..NTD5865N
NTD5865NL ..NX3008NBK
NX3008NBKS ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFF60P06
RFF70N06 ..RJK1212DNS
RJK1212DPA ..RSF015N06
RSH065N06 ..SDF220
SDF230JAA ..SFW9510
SFW9520 ..SMK0460F
SMK0460I ..SML601R3CN
SML601R3GN ..SPD06N60C3
SPD06N80C3 ..SSG4502C
SSG4502CE ..SSM3K15AMFV
SSM3K15CT ..SSP7434N
SSP7436N ..STB6N52K3
STB6NK60Z ..STD60NF55L-1
STD60NF55LA ..STG8205
STG8209 ..STM4433A
STM4435 ..STP21N05LFI
STP21N06L ..STP6NK90Z
STP70L60 ..STT3520C
STT3585 ..STW12N60
STW12NA50 ..TK13P25D
TK14A45D ..TPC8027
TPC8028 ..TPCC8076
TPCC8084 ..UT4446
UT45N03 ..ZVN4306G
ZVN4306GV ..ZXMS6006SG
 
MOSFET. Справочник. Даташиты. Основные параметры и характеристики. Поиск аналогов
 

STU438S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: STU438S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 42

Предельно допустимое напряжение сток-исток (Uds): 40

Предельно допустимое напряжение затвор-исток (Ugs): 20

Максимально допустимый постоянный ток стока (Id): 50

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf: 250

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 0.009

Тип корпуса: TO252_DPAK

Аналог (замена) для STU438S

STU438S PDF doc:

1.1. stu438s_std438s.pdf Size:112K _samhop

STU438S
STU438S
Gree r r P Pr Pr Pro STU/D438S a S mHop Microelectronics C orp. Ver 1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c IAS Single Pulse Avalanche Current A 23 c EAS mJ Single Pulse Avalanche Energy 132 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 175 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance,

4.1. stu438a_std438a.pdf Size:127K _samhop

STU438S
STU438S
Green Product STU/D438A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO251 Package. 40V 47A 11 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C A 47 a ID Drain Current-Continuous TC=70°C 38 A b IDM -Pulsed 138 A d EAS Sigle Pulse Avalanche Energy 169 mJ TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 °C/W JC a R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject to change wi

5.1. stu434s_std434s.pdf Size:123K _samhop

STU438S
STU438S
Green Product STU/D434S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9.2 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11.5 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c EAS mJ Single Pulse Avalanche Energy 91 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to c

5.2. stu435s_std435s.pdf Size:110K _samhop

STU438S
STU438S
Gr P Pr P P STU/D435S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 17.5 @ VGS=10V Suface Mount Package. -40V -38A 27 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Limit Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C A -38 ID Drain Current-Continuous -30.4 TC=70°C A a IDM -Pulsed -115 A c EAS Sigle Pulse Avalanche Energy 156 mJ TC=25°C 42 W PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case 3 °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change w

5.3. stu437s_std437s.pdf Size:128K _samhop

STU438S
STU438S
STU437S Green Product STD437S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 16 @ VGS=-10V Suface Mount Package. -40V -32A 30 @ VGS=-4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Units Limit VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C -32 A a e ID Drain Current-Continuous TC=70°C -25.6 A b IDM -Pulsed -94 A d EAS Sigle Pulse Avalanche Energy mJ 121 W TC=25°C 42 PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 3 °C/W JC R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject

5.4. stu432l_std432l.pdf Size:110K _samhop

STU438S
STU438S
Gre r r P Pr Pr Pro STU/D432L a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 10 @ VGS=10V TO-252 and TO251 Package. 40V 42A 15 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 42 A a ID Drain Current-Continuous TC=70°C 34 A b IDM A -Pulsed 123 d EAS mJ Single Pulse Avalanche Energy 121 TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 JC °C/W a R 50 JA Thermal Resistance, Junction-to-Ambient °C/W Details are subjec

5.5. stu432s_std432s.pdf Size:121K _samhop

STU438S
STU438S
Green Product STU/D432S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed d IAS Single Pulse Avalanche Current A 23 d EAS mJ Single Pulse Avalanche Energy 130 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R 3 JC Thermal Resistance, Junction-to-Case °C/W a R JA Thermal Resistance, Junct

Другие MOSFET... 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S , 2N7002VAC , 2N7002VC , IRF540N , BS870 , BSN20 , BSS138DW , STU438A , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV .

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