MOSFET. Справочник. Даташиты

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STU438S
  STU438S
  STU438S
 
STU438S
  STU438S
  STU438S
 
STU438S
  STU438S
 
 
Список
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
MOSFET. Справочник. Даташиты. Основные параметры и характеристики. Поиск аналогов
 

STU438S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: STU438S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 42

Предельно допустимое напряжение сток-исток (Uds): 40

Предельно допустимое напряжение затвор-исток (Ugs): 20

Максимально допустимый постоянный ток стока (Id): 50

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf: 250

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 0.009

Тип корпуса: TO252_DPAK

Аналог (замена) для STU438S

STU438S PDF doc:

1.1. stu438s_std438s.pdf Size:112K _samhop

STU438S
STU438S
Gree r r P Pr Pr Pro STU/D438S a S mHop Microelectronics C orp. Ver 1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c IAS Single Pulse Avalanche Current A 23 c EAS mJ Single Pulse Avalanche Energy 132 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 175 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance,

4.1. stu438a_std438a.pdf Size:127K _samhop

STU438S
STU438S
Green Product STU/D438A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO251 Package. 40V 47A 11 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C A 47 a ID Drain Current-Continuous TC=70°C 38 A b IDM -Pulsed 138 A d EAS Sigle Pulse Avalanche Energy 169 mJ TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 °C/W JC a R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject to change wi

5.1. stu437s_std437s.pdf Size:128K _samhop

STU438S
STU438S
STU437S Green Product STD437S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 16 @ VGS=-10V Suface Mount Package. -40V -32A 30 @ VGS=-4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Units Limit VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C -32 A a e ID Drain Current-Continuous TC=70°C -25.6 A b IDM -Pulsed -94 A d EAS Sigle Pulse Avalanche Energy mJ 121 W TC=25°C 42 PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 3 °C/W JC R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject

5.2. stu435s_std435s.pdf Size:110K _samhop

STU438S
STU438S
Gr P Pr P P STU/D435S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 17.5 @ VGS=10V Suface Mount Package. -40V -38A 27 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Limit Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C A -38 ID Drain Current-Continuous -30.4 TC=70°C A a IDM -Pulsed -115 A c EAS Sigle Pulse Avalanche Energy 156 mJ TC=25°C 42 W PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case 3 °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change w

5.3. stu432l_std432l.pdf Size:110K _samhop

STU438S
STU438S
Gre r r P Pr Pr Pro STU/D432L a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 10 @ VGS=10V TO-252 and TO251 Package. 40V 42A 15 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 42 A a ID Drain Current-Continuous TC=70°C 34 A b IDM A -Pulsed 123 d EAS mJ Single Pulse Avalanche Energy 121 TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 JC °C/W a R 50 JA Thermal Resistance, Junction-to-Ambient °C/W Details are subjec

5.4. stu434s_std434s.pdf Size:123K _samhop

STU438S
STU438S
Green Product STU/D434S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9.2 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11.5 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c EAS mJ Single Pulse Avalanche Energy 91 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to c

5.5. stu432s_std432s.pdf Size:121K _samhop

STU438S
STU438S
Green Product STU/D432S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed d IAS Single Pulse Avalanche Current A 23 d EAS mJ Single Pulse Avalanche Energy 130 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R 3 JC Thermal Resistance, Junction-to-Case °C/W a R JA Thermal Resistance, Junct

Другие MOSFET... 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S , 2N7002VAC , 2N7002VC , IRF540N , BS870 , BSN20 , BSS138DW , STU438A , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV .

 

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