MOSFET. Справочник. Даташиты

Введите не менее 3 символов (только цифры или буквы)
 
STU438S
  STU438S
  STU438S
 
STU438S
  STU438S
  STU438S
 
STU438S
  STU438S
 
 
Список
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB2532_F085
FDB2552 ..FDD8870
FDD8870_F085 ..FDMS86105
FDMS86200 ..FDS4501H
FDS4559 ..FK7SM-12
FK7UM-12 ..FQP11N40C
FQP11N40C ..FRE264D
FRE264H ..FSL23A4D
FSL23A4R ..H7N0311LD
H7N0311LM ..HAT2179R
HAT2183WP ..HUF76129D3S
HUF76129P3 ..IPB120N06S4-02
IPB120N06S4-03 ..IPD60R520CP
IPD60R600C6 ..IPP072N10N3G
IPP075N15N3G ..IRC130
IRC140 ..IRF3711ZCS
IRF3711ZL ..IRF6723M2D
IRF6724M ..IRF7752G
IRF7754G ..IRFB3206G
IRFB3207 ..IRFI4321
IRFI4410Z ..IRFP350LC
IRFP351 ..IRFS153
IRFS230 ..IRFSL3607
IRFSL3806 ..IRFZ34NL
IRFZ34NS ..IRLL3303
IRLM014A ..IXBH20N140
IXBH20N160 ..IXFH58N20
IXFH58N20Q ..IXFN100N50Q3
IXFN102N30P ..IXFR64N50P
IXFR64N50Q3 ..IXFX520N075T2
IXFX52N60Q2 ..IXTC280N055T
IXTC36P15P ..IXTK140N30P
IXTK150N15P ..IXTP60N20T
IXTP60N28TM-A ..IXTV22N60P
IXTV22N60PS ..KF70N06F
KF70N06P ..KP731B
KP731V ..MMBF4391
MMBF4391L ..MTD6N20E
MTDA0N10J3 ..MTN5N60J3
MTN5N65FP ..NDD05N50Z
NDF02N60Z ..NTGS3130N
NTGS3136P ..P1087
PF5102 ..PMN23UN
PMN25EN ..PSMN7R0-40LS
PSMN7R0-60YS ..RFP12N10L
RFP12P08 ..RJK2017DPE
RJK2017DPP ..RSR025N03
RSR025N05 ..SDF360JEC
SDF360JED ..SGM2310A
SGM3055 ..SMK0860P
SMK0870F ..SML6060AN
SML6060BN ..SPD50N03S2L-06G
SPD50P03LG ..SSG4841P
SSG4842N ..SSM3K309T
SSM3K310T ..SSPS7331P
SSPS7332N ..STB80NF03L-04
STB80NF03L-04T4 ..STD70NS04ZL
STD75N3LLH6 ..STH15NA50FI
STH180N10F3-2 ..STM4639
STM4639T ..STP25N06FI
STP25NM60ND ..STP7NA40
STP7NA40FI ..STT6405
STT6602 ..STW15NM60ND
STW160N75F3 ..TK16A45D
TK16A55D ..TPC8046-H
TPC8047-H ..TPCF8105
TPCF8107 ..UT70P03
UT7317 ..ZVP0540A
ZVP0545A ..ZXMS6006SG
 
MOSFET. Справочник. Даташиты. Основные параметры и характеристики. Поиск аналогов
 

STU438S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: STU438S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 42

Предельно допустимое напряжение сток-исток (Uds): 40

Предельно допустимое напряжение затвор-исток (Ugs): 20

Максимально допустимый постоянный ток стока (Id): 50

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf: 250

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 0.009

Тип корпуса: TO252_DPAK

Аналог (замена) для STU438S

STU438S PDF doc:

1.1. stu438s_std438s.pdf Size:112K _samhop

STU438S
STU438S
Gree r r P Pr Pr Pro STU/D438S a S mHop Microelectronics C orp. Ver 1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c IAS Single Pulse Avalanche Current A 23 c EAS mJ Single Pulse Avalanche Energy 132 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 175 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance,

4.1. stu438a_std438a.pdf Size:127K _samhop

STU438S
STU438S
Green Product STU/D438A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO251 Package. 40V 47A 11 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C A 47 a ID Drain Current-Continuous TC=70°C 38 A b IDM -Pulsed 138 A d EAS Sigle Pulse Avalanche Energy 169 mJ TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 °C/W JC a R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject to change wi

5.1. stu434s_std434s.pdf Size:123K _samhop

STU438S
STU438S
Green Product STU/D434S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9.2 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11.5 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed c EAS mJ Single Pulse Avalanche Energy 91 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junction-to-Case °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to c

5.2. stu435s_std435s.pdf Size:110K _samhop

STU438S
STU438S
Gr P Pr P P STU/D435S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 17.5 @ VGS=10V Suface Mount Package. -40V -38A 27 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Limit Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C A -38 ID Drain Current-Continuous -30.4 TC=70°C A a IDM -Pulsed -115 A c EAS Sigle Pulse Avalanche Energy 156 mJ TC=25°C 42 W PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case 3 °C/W R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change w

5.3. stu437s_std437s.pdf Size:128K _samhop

STU438S
STU438S
STU437S Green Product STD437S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 16 @ VGS=-10V Suface Mount Package. -40V -32A 30 @ VGS=-4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Units Limit VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V TC=25°C -32 A a e ID Drain Current-Continuous TC=70°C -25.6 A b IDM -Pulsed -94 A d EAS Sigle Pulse Avalanche Energy mJ 121 W TC=25°C 42 PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 3 °C/W JC R Thermal Resistance, Junction-to-Ambient 50 JA °C/W Details are subject

5.4. stu432l_std432l.pdf Size:110K _samhop

STU438S
STU438S
Gre r r P Pr Pr Pro STU/D432L a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 10 @ VGS=10V TO-252 and TO251 Package. 40V 42A 15 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 42 A a ID Drain Current-Continuous TC=70°C 34 A b IDM A -Pulsed 123 d EAS mJ Single Pulse Avalanche Energy 121 TC=25°C 42 W a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R Thermal Resistance, Junction-to-Case 3 JC °C/W a R 50 JA Thermal Resistance, Junction-to-Ambient °C/W Details are subjec

5.5. stu432s_std432s.pdf Size:121K _samhop

STU438S
STU438S
Green Product STU/D432S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V TC=25°C 50 A a ID Drain Current-Continuous TC=70°C 40 A b IDM 147 A -Pulsed d IAS Single Pulse Avalanche Current A 23 d EAS mJ Single Pulse Avalanche Energy 130 W TC=25°C 42 a PD Maximum Power Dissipation TC=70°C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS a R 3 JC Thermal Resistance, Junction-to-Case °C/W a R JA Thermal Resistance, Junct

Другие MOSFET... 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S , 2N7002VAC , 2N7002VC , IRF540N , BS870 , BSN20 , BSS138DW , STU438A , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV .

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