All Transistors. 2SC3609 Datasheet

 

2SC3609 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3609
   SMD Transistor Code: MH
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 7000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SP1

 2SC3609 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3609 Datasheet (PDF)

 8.1. Size:485K  toshiba
2sc3605.pdf

2SC3609 2SC3609

2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm FEATURES: Low Noise Figure, High Gain NF = 1.1dB, |S |2 = 10dB (f = 1GHz) 21eMAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 3 VCol

 8.2. Size:463K  toshiba
2sc3606.pdf

2SC3609 2SC3609

2SC3606 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

 8.3. Size:468K  toshiba
2sc3607.pdf

2SC3609 2SC3609

2SC3607 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 9.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V

 8.4. Size:108K  sanyo
2sa1407 2sc3601.pdf

2SC3609 2SC3609

Ordering number:EN1766CPNP/NPN Epitaxial Planar Silicon Transistors2SA1407/2SC3601Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1407/2SC3601] Wide-band amp.Features High fT : fT typ=400MHz. High breakdown voltage : VCEO

 8.5. Size:136K  sanyo
2sa1406 2sc3600.pdf

2SC3609 2SC3609

Ordering number:EN1765APNP/NPN Epitaxial Planar Silicon Transistors2SA1406/2SC3600Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009A Color TV chroma output.[2SA1406/2SC3600] Wide-band amp.Features High fT : fT typ=400MHz. High breakdown voltage : VCEO

 8.6. Size:257K  nec
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

2SC3609 2SC3609

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

 8.7. Size:89K  nec
2sc3603.pdf

2SC3609 2SC3609

DATA SHEETSILICON TRANSISTOR2SC3603NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE LOW-NOISE AMPLIFICATIONThe 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm)noise amplification at 0.5 to 4.0 GHz. This transistor has low-noiseand high-gain characteristics in a wide collector current region, and Ehas a wide dynamic range.FEATURES3.8 MIN. 3.8 M

 8.8. Size:94K  nec
2sc3604.pdf

2SC3609 2SC3609

DATA SHEETSILICON TRANSISTOR2SC3604NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE LOW-NOISE AMPLIFICATIONThe 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm)noise amplification at 1.0 to 6.0 GHz. This transistor has low-noiseand high-gain characteristics in a wide collector current region, and Ehas a wide dynamic range.FEATURES3.8 MIN. 3.8 M

 8.9. Size:218K  nec
2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf

2SC3609 2SC3609

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

 8.10. Size:179K  no
2sc3608.pdf

2SC3609

 8.11. Size:1704K  kexin
2sc3606.pdf

2SC3609 2SC3609

SMD Type TransistorsNPN Transistors2SC3606SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=12V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

 8.12. Size:1604K  kexin
2sc3607.pdf

2SC3609 2SC3609

SMD Type TransistorsNPN Transistors2SC3607SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=12V Marking : MH0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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