2SC3609 PDF and Equivalents Search

 2sc3605.pdf

2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 VHF UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm FEATURES Low Noise Figure, High Gain NF = 1.1dB, S 2 = 10dB (f = 1GHz) 21e MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Col... See More ⇒

 2sc3606.pdf

2SC3606 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C... See More ⇒

 2sc3607.pdf

2SC3607 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 9.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V ... See More ⇒

 2sa1407 2sc3601.pdf

Ordering number EN1766C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1407/2SC3601 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1407/2SC3601] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO... See More ⇒

 2sa1406 2sc3600.pdf

Ordering number EN1765A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1406/2SC3600 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009A Color TV chroma output. [2SA1406/2SC3600] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO... See More ⇒

 ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application... See More ⇒

 2sc3603.pdf

DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 M... See More ⇒

 2sc3604.pdf

DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 M... See More ⇒

 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a... See More ⇒

 2sc3608.pdf

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 2sc3606.pdf

SMD Type Transistors NPN Transistors 2SC3606 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=12V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect... See More ⇒

 2sc3607.pdf

SMD Type Transistors NPN Transistors 2SC3607 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=12V Marking MH 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter... See More ⇒