2SD117 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD117
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
2SD117 Transistor Equivalent Substitute - Cross-Reference Search
2SD117 Datasheet (PDF)
2sd1175.pdf
NPN TRIPLE DIFFUSED2SD1175 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll
2sd1170.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1170DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid,motor and general purpose applic
2sd1175.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1175DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 6.0V(Max.)@ I = 5.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl
2sd1172.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1172DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl
2sd1173.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1173DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 3.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl
2sd1171.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1171DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
