2SD2337C Datasheet. Specs and Replacement

Type Designator: 2SD2337C  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220FM

 2SD2337C Substitution

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2SD2337C datasheet

 7.1. Size:41K  hitachi

 2sd2337.pdf pdf_icon

2SD2337C

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒

 8.1. Size:189K  inchange semiconductor

 2sd2333.pdf pdf_icon

2SD2337C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2333 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 8.2. Size:189K  inchange semiconductor

 2sd2335.pdf pdf_icon

2SD2337C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2335 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 8.3. Size:189K  inchange semiconductor

 2sd2331.pdf pdf_icon

2SD2337C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2331 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

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Detailed specifications: 2SD231, 2SD2311, 2SD232, 2SD2323, 2SD232A, 2SD232F, 2SD2337, 2SD2337B, 2N3055, 2SD234, 2SD2342, 2SD2342B, 2SD2342C, 2SD2344, 2SD2348, 2SD2349, 2SD234G

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