Справочник транзисторов. 2SD2337C

 

Биполярный транзистор 2SD2337C - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD2337C
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO220FM

 Аналоги (замена) для 2SD2337C

 

 

2SD2337C Datasheet (PDF)

 7.1. Size:41K  hitachi
2sd2337.pdf

2SD2337C
2SD2337C

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.1. Size:189K  inchange semiconductor
2sd2333.pdf

2SD2337C
2SD2337C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2333DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.2. Size:189K  inchange semiconductor
2sd2335.pdf

2SD2337C
2SD2337C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2335DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.3. Size:189K  inchange semiconductor
2sd2331.pdf

2SD2337C
2SD2337C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2331DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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