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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
BC337 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC337 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC337

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.36

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of BC337 transistor: TO92

BC337 Equivalent Transistors - Cross-Reference Search

BC337 PDF doc:

1.1. bc337_bc338.pdf Size:119K _motorola

BC337
BC337
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO 45 25 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)

1.2. bc337_bc338_1.pdf Size:163K _motorola

BC337
BC337
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO 45 25 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)

1.3. bc337_3.pdf Size:52K _philips

BC337
BC337
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. 1 handbook, halfpage 3 2 DESCRIPTION 3 2 NPN transistor in a TO-92; SOT54 plastic package. PNP complement: BC327. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 500 mA ICM peak col

1.4. bc817_bc817w_bc337.pdf Size:236K _philips

BC337
BC337
BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA BC817 SOT23 - BC807 BC817W SOT323 SC-70 BC807W BC337[1] SOT54 (TO-92) SC-43A BC327 [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base; - - 45 V IC =10mA IC collector current (DC) - - 500 mA ICM peak collector current - - 1 A [1] hFE DC current gain IC = 100 mA; - - - VCE =1V BC817; BC817W; BC337 100 - 600 BC817-16; BC817-16W; BC337-16 100 - 250 BC817-25; BC817-25W; BC337-25 160 - 400 BC817-40; BC817-40W; BC337-40 250 - 600 [1] Pulse test: t

1.5. bc337-25_bc337-40.pdf Size:66K _st

BC337
BC337
BC337-25 BC337-40 ® SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC337-25 BC337-25 TO-92 / Bulk BC337-25-AP BC337-25 TO-92 / Ammopack BC337-40 BC337-40 TO-92 / Bulk BC337-40-AP BC337-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 THE PNP COMPLEMENTARY TYPES ARE Bulk Ammopack BC327-25 AND BC327-40 RESPECTIVELY APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS INTERNAL SCHEMATIC DIAGRAM WITH HIGH GAIN AND LOW SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 50 V V Collector-Emitter Voltage (I = 0) 45 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 0.5 A ICM Collector Peak Current (tp < 5 ms) 1 A Ptot Total Dissipation at TC = 25 oC 625 mW o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Juncti

1.6. bc337_bc338.pdf Size:27K _fairchild_semi

BC337
BC337
BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC337 50 V : BC338 30 V VCEO Collector-Emitter Voltage : BC337 45 V : BC338 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 : BC337 45 V : BC338 25 V BVCES Collector-Emitter Breakdown Voltage IC=0.1mA, VBE=0 : BC337 50 V : BC338 30 V BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 5 V ICES Collector Cut-off Current : BC337 VCE=45V, IB=0 2 1

1.7. bc337-16_bc337-25.pdf Size:15K _fairchild_semi

BC337
BC337
BC337-16 BC337-25 E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units BC337-16 / BC337-25 PD Tot

1.8. bc337_338_1.pdf Size:179K _vishay

BC337
BC337
BC337 and BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-226AA (TO-92) Features • NPN Silicon Epitaxial Planar Transistors for switching 0.142 (3.6) 0.181 (4.6) and amplifier applications. Especially suited for AF-driver stages and low power output stages. • These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18. Mechanical Data Case: TO-92 Plastic Package max. ? Weight: approx. 0.18g 0.022 (0.55) Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box 0.098 (2.5) E7/4K per Ammo mag., 20K/box Dimensions in inches and (millimeters) Bottom View Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit BC337

1.9. bc337-a_bc338.pdf Size:65K _central

BC337
BC337
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.10. bc337-16-25-40_bc338-16-25-40.pdf Size:234K _mcc

BC337
BC337
MCC BC337-16/25/40 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components BC338-16/25/40 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Capable of 0.625Watts of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 TO-92 Maximum Ratings • Operating temperature : -55 to +150 A E • Storage temperature : -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units B OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage --- Vdc (IC=10mAdc, IB=0) BC337 45 BC338 25 V(BR)CBO Collector-Base Breakdown Voltage --- Vdc (IC=100µAdc, IE=0) C BC337 50 BC338 30 V(BR)EBO Collector-Emitter

1.11. bc337-25-40.pdf Size:141K _onsemi

BC337
BC337
BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features • These are Pb-Free Devices COLLECTOR 1 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 45 Vdc 3 EMITTER Collector - Base Voltage VCBO 50 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C TO-92 CASE 29 Total Device Dissipation @ TC = 25°C PD 1.5 W STYLE 17 Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C 1 1 Temperature Range 2 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t

1.12. sbc337.pdf Size:192K _auk

BC337
BC337
SBC337 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Switching application B Features • Suitable for AF-Driver stage and low E power output stages • Complementary pair with SBC327 TO-92 Ordering Information Type NO. Marking Package Code SBC337 SBC337 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 35 V Emitter-Base voltage VEBO 5 V Collector current IC 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO IC=1mA, IE=0 35 - - V Base-Emitter turn on voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Collector-Emitter saturation voltage VCE(sat) IC=500mA, IB=50mA - - 700 mV Collector cut-off current ICBO VCB=25V, IE=0 - -

1.13. bc337~bc338.pdf Size:362K _secos

BC337
BC337
BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 2Base 2 2 2 J 3Emitter 3 3 3 CLASSIFICATION OF hFE A D Product-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank BC338-16 BC338-25 BC338-40 B 4.30 4.70 K C 12.70 - Range 100~250 160~400 250~630 D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit BC337 50 Collector to Base Voltage VCBO V BC338 30 BC337 45 Collector to Emitter Voltage VCEO V BC338 25 Emitter to Base Voltage V 5 V EBO Collector Current - Continuous I 800 mA C Total Device Dissipation P 625 mW D Junction, Storage Temperature T

1.14. bc327_bc328_bc337_bc338.pdf Size:117K _cdil

BC337
BC337
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC327/337 BC327A/337A BC328/338 UNITS Collector Emitter Voltage VCEO 45 60 25 V Collector Emitter Voltage VCES 50 60 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 800 mA Collector Current Peak ICM 1000 mA Emitter Current Peak IEM 1000 mA Base Current Continuous IB 100 mA Base Current Peak IBM 200 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 65 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C

1.15. bc337.pdf Size:338K _kec

BC337
BC337
SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). N DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VCBO Collector-Base Voltage 50 V M 0.45 MAX N 1.00 VCEO 1 2 3 Collector-Emitter Voltage 45 V VEBO 1. COLLECTOR Emitter-Base Voltage 5 V 2. BASE IC Collector Current 800 mA 3. EMITTER IE Emitter Current -800 mA PC Collector Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=45V, IE=0 Collector Cut-off Current - - 100 nA hFE VCE=1V, IC=100mA DC Current Gain

1.16. bc337-338.pdf Size:172K _lge

BC337
BC337
BC337/338(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PD Total Device Dissipation 625 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC= 100uA, IE=0 BC337 50 V BC338 30 V Collector-emitter breakdown voltage IC= 10mA , IB=0 BC337 VCEO 45 V BC338 25 V Emitter-base breakdown voltage VEBO IE= 10uA, IC=0 5 V Collector cut-off current BC337 ICBO VCB= 45V, IE=0 0.1 uA BC338 VCB= 25V, IE=0 0.1 Collector cut-off curren

1.17. bc337_bc338.pdf Size:256K _wietron

BC337
BC337
BC337/BC338 NPN General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC337 BC338 Unit VCBO Collector-Base voltage 50 30 V VCEO V Collector-Emitter voltage 45 25 VEBO V Emitter-Base voltage 5.0 5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C Alumina Substrate,TA=25°C TJ Operating Junction Temperature Range -55 to +150 °C Tstg °C Storage Junction Temperature Range -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=100µA, IE=0 BC337 V(BR)CBO 50 - - V BC338 30 Collector-Emitter Breakdown Voltage IC=10mA, IB=0 V(BR)CEO 45 BC337 - - V BC338 25 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 - - Vdc BC337 IC=10µA, IC=0 BC338 WEITRON 1/3 30-Jun-06 http://www.weitron.com.tw BC337/BC338 ELECTRICAL CHARACTERISTICS(TA=25°C u

See also transistors datasheet: BC332 , BC332A , BC332B , BC332C , BC333 , BC334 , BC335 , BC336 , 2N2219 , BC337-01 , BC337-10 , BC337-16 , BC337-25 , BC337-40 , BC337A-16 , BC337A-25 , BC337AP .

Keywords

 BC337 Datasheet  BC337 Datenblatt  BC337 RoHS  BC337 Distributor
 BC337 Application Notes  BC337 Component  BC337 Circuit  BC337 Schematic
 BC337 Equivalent  BC337 Cross Reference  BC337 Data Sheet  BC337 Fiche Technique

 

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