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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
BC337 All Transistors Datasheet. Power MOSFET, IGBT, IC, Triacs Database. Semiconductor Catalog
 

BC337 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC337

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.36

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of BC337 transistor: TO92

BC337 Equivalent Transistors - Cross-Reference Search

BC337 PDF doc:

1.1. bc337_bc338_1.pdf Size:163K _motorola

BC337
BC337
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 45 25 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 50 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 800 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)

1.2. bc337_bc338.pdf Size:119K _motorola

BC337
BC337
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 45 25 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 50 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 800 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)

1.3. bc337_3.pdf Size:52K _philips

BC337
BC337
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. 1 handbook, halfpage 3 2 DESCRIPTION 3 2 NPN transistor in a TO-92; SOT54 plastic package. PNP complement: BC327. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 500 mA ICM peak col

1.4. bc817_bc817w_bc337.pdf Size:236K _philips

BC337
BC337
BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA BC817 SOT23 - BC807 BC817W SOT323 SC-70 BC807W BC337[1] SOT54 (TO-92) SC-43A BC327 [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base; - - 45 V IC =10mA IC collector current (DC) - - 500 mA ICM peak collector current - - 1 A [1] hFE DC current gain IC = 100 mA; - - - VCE =1V BC817; BC817W; BC337 100 - 600 BC817-16; BC817-16W; BC337-16 100 - 250 BC817-25; BC817-25W; BC337-25 160 - 400 BC817-40; BC817-40W; BC337-40 250 - 600 [1] Pulse test: t

1.5. bc337-25_bc337-40.pdf Size:66K _st

BC337
BC337
BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC337-25 BC337-25 TO-92 / Bulk BC337-25-AP BC337-25 TO-92 / Ammopack BC337-40 BC337-40 TO-92 / Bulk BC337-40-AP BC337-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 THE PNP COMPLEMENTARY TYPES ARE Bulk Ammopack BC327-25 AND BC327-40 RESPECTIVELY APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS INTERNAL SCHEMATIC DIAGRAM WITH HIGH GAIN AND LOW SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 50 V V Collector-Emitter Voltage (I = 0) 45 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 0.5 A ICM Collector Peak Current (tp < 5 ms) 1 A Ptot Total Dissipation at TC = 25 oC 625 mW o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Juncti

1.6. bc337-16_bc337-25.pdf Size:15K _fairchild_semi

BC337
BC337
BC337-16 BC337-25 E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units BC337-16 / BC337-25 PD Tot

1.7. bc337_bc338.pdf Size:27K _fairchild_semi

BC337
BC337
BC337/338 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC337 50 V : BC338 30 V VCEO Collector-Emitter Voltage : BC337 45 V : BC338 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 : BC337 45 V : BC338 25 V BVCES Collector-Emitter Breakdown Voltage IC=0.1mA, VBE=0 : BC337 50 V : BC338 30 V BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 5 V ICES Collector Cut-off Current : BC337 VCE=45V, IB=0 2 1

1.8. bc337_338_1.pdf Size:179K _vishay

BC337
BC337
BC337 and BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-226AA (TO-92) Features NPN Silicon Epitaxial Planar Transistors for switching 0.142 (3.6) 0.181 (4.6) and amplifier applications. Especially suited for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. Mechanical Data Case: TO-92 Plastic Package max. ? Weight: approx. 0.18g 0.022 (0.55) Packaging Codes/Options: E6/Bulk 5K per container, 20K/box 0.098 (2.5) E7/4K per Ammo mag., 20K/box Dimensions in inches and (millimeters) Bottom View Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol Value Unit BC337

1.9. bc337-a_bc338.pdf Size:65K _central

BC337
BC337
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.10. bc337-16-25-40_bc338-16-25-40.pdf Size:234K _mcc

BC337
BC337
MCC BC337-16/25/40 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components BC338-16/25/40 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 TO-92 Maximum Ratings Operating temperature : -55 to +150 A E Storage temperature : -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units B OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage --- Vdc (IC=10mAdc, IB=0) BC337 45 BC338 25 V(BR)CBO Collector-Base Breakdown Voltage --- Vdc (IC=100Adc, IE=0) C BC337 50 BC338 30 V(BR)EBO Collector-Emitter

1.11. bc337-25-40.pdf Size:141K _onsemi

BC337
BC337
BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features These are Pb-Free Devices COLLECTOR 1 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 45 Vdc 3 EMITTER Collector - Base Voltage VCBO 50 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 800 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C TO-92 CASE 29 Total Device Dissipation @ TC = 25C PD 1.5 W STYLE 17 Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg -55 to +150 C 1 1 Temperature Range 2 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t

1.12. sbc337.pdf Size:192K _auk

BC337
BC337
SBC337 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Switching application B Features • Suitable for AF-Driver stage and low E power output stages • Complementary pair with SBC327 TO-92 Ordering Information Type NO. Marking Package Code SBC337 SBC337 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 35 V Emitter-Base voltage VEBO 5 V Collector current IC 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO IC=1mA, IE=0 35 - - V Base-Emitter turn on voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Collector-Emitter saturation voltage VCE(sat) IC=500mA, IB=50mA - - 700 mV Collector cut-off current ICBO VCB=25V, IE=0 - -

1.13. bc337~bc338.pdf Size:362K _secos

BC337
BC337
BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 2Base 2 2 2 J 3Emitter 3 3 3 CLASSIFICATION OF hFE A D Product-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank BC338-16 BC338-25 BC338-40 B 4.30 4.70 K C 12.70 - Range 100~250 160~400 250~630 D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit BC337 50 Collector to Base Voltage VCBO V BC338 30 BC337 45 Collector to Emitter Voltage VCEO V BC338 25 Emitter to Base Voltage V 5 V EBO Collector Current - Continuous I 800 mA C Total Device Dissipation P 625 mW D Junction, Storage Temperature T

1.14. bc327_bc328_bc337_bc338.pdf Size:117K _cdil

BC337
BC337
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC327/337 BC327A/337A BC328/338 UNITS Collector Emitter Voltage VCEO 45 60 25 V Collector Emitter Voltage VCES 50 60 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 800 mA Collector Current Peak ICM 1000 mA Emitter Current Peak IEM 1000 mA Base Current Continuous IB 100 mA Base Current Peak IBM 200 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 65 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C

1.15. bc337.pdf Size:338K _kec

BC337
BC337
SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). N DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VCBO Collector-Base Voltage 50 V M 0.45 MAX N 1.00 VCEO 1 2 3 Collector-Emitter Voltage 45 V VEBO 1. COLLECTOR Emitter-Base Voltage 5 V 2. BASE IC Collector Current 800 mA 3. EMITTER IE Emitter Current -800 mA PC Collector Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=45V, IE=0 Collector Cut-off Current - - 100 nA hFE VCE=1V, IC=100mA DC Current Gain

1.16. bc337-338.pdf Size:172K _lge

BC337
BC337
BC337/338(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PD Total Device Dissipation 625 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC= 100uA, IE=0 BC337 50 V BC338 30 V Collector-emitter breakdown voltage IC= 10mA , IB=0 BC337 VCEO 45 V BC338 25 V Emitter-base breakdown voltage VEBO IE= 10uA, IC=0 5 V Collector cut-off current BC337 ICBO VCB= 45V, IE=0 0.1 uA BC338 VCB= 25V, IE=0 0.1 Collector cut-off curren

1.17. bc337_bc338.pdf Size:256K _wietron

BC337
BC337
BC337/BC338 NPN General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC337 BC338 Unit VCBO Collector-Base voltage 50 30 V VCEO V Collector-Emitter voltage 45 25 VEBO V Emitter-Base voltage 5.0 5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C Alumina Substrate,TA=25°C TJ Operating Junction Temperature Range -55 to +150 °C Tstg °C Storage Junction Temperature Range -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=100µA, IE=0 BC337 V(BR)CBO 50 - - V BC338 30 Collector-Emitter Breakdown Voltage IC=10mA, IB=0 V(BR)CEO 45 BC337 - - V BC338 25 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 - - Vdc BC337 IC=10µA, IC=0 BC338 WEITRON 1/3 30-Jun-06 http://www.weitron.com.tw BC337/BC338 ELECTRICAL CHARACTERISTICS(TA=25°C u

1.18. bc337m.pdf Size:808K _blue-rocket-elect

BC337
BC337
BC337M(BR3DG337M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 大电流,与 BC327M(BR3CG327M)互补。 High current, complementary pair with BC327M(BR3CG327M). 用途 / Applications 用于一般放大及开关线路。 General power amplifier and switching.  内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications 16 25 40 Symbol hFE Range 100~250 160~400 250~600 Marking H6C1 H6C2 H6C4 http://www.fsbrec.com 1 / 6 BC337M(BR3DG337M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5.0 V

See also transistors datasheet: BC332 , BC332A , BC332B , BC332C , BC333 , BC334 , BC335 , BC336 , 2N2219 , BC337-01 , BC337-10 , BC337-16 , BC337-25 , BC337-40 , BC337A-16 , BC337A-25 , BC337AP .

Keywords

 BC337 Datasheet  BC337 Design BC337 MOSFET BC337 Power
 BC337 RoHS Compliant BC337 Service BC337 Triacs BC337 Semiconductor
 BC337 Database BC337 Innovation BC337 IC BC337 Electricity

 

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