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BC337 Transistor (IC) Datasheet. Cross Reference Search. BC337 Equivalent

Type Designator: BC337

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.36

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of BC337 transistor: TO92

BC337 Transistor Equivalent Substitute - Cross-Reference Search

 

BC337 PDF:

1.1. bc337_bc338_1.pdf Size:163K _motorola

BC337
BC337

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 45 25 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 50 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Coll

1.2. bc337_bc338.pdf Size:119K _motorola

BC337
BC337

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 45 25 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 50 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Coll

1.3. bc337_3.pdf Size:52K _philips

BC337
BC337

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector Genera

1.4. bc817_bc817w_bc337.pdf Size:236K _philips

BC337
BC337

BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA BC817 SOT23 - BC807 BC817W SOT323 SC-70 BC807W BC337[1] SOT54 (TO-92) SC-43A BC327 [1] Also available in SOT54A and SOT54 variant

1.5. bc337-25_bc337-40.pdf Size:66K _st

BC337
BC337

BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC337-25 BC337-25 TO-92 / Bulk BC337-25-AP BC337-25 TO-92 / Ammopack BC337-40 BC337-40 TO-92 / Bulk BC337-40-AP BC337-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 THE PNP COMPLEMENTARY TYPES ARE

1.6. bc337-16_bc337-25.pdf Size:15K _fairchild_semi

BC337
BC337

BC337-16 BC337-25 E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50

1.7. bc337_bc338.pdf Size:27K _fairchild_semi

BC337
BC337

BC337/338 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC337 50 V : BC338 30 V VCEO Collector-Emitter Voltage : B

1.8. bc337_338_1.pdf Size:179K _vishay

BC337
BC337

BC337 and BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-226AA (TO-92) Features NPN Silicon Epitaxial Planar Transistors for switching 0.142 (3.6) 0.181 (4.6) and amplifier applications. Especially suited for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, acco

1.9. bc337-a_bc338.pdf Size:65K _central

BC337
BC337

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.10. bc337-16-25-40_bc338-16-25-40.pdf Size:234K _mcc

BC337
BC337

MCC BC337-16/25/40 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components BC338-16/25/40 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors Lead Free Finish/RoHS Co

1.11. bc337-25-40.pdf Size:141K _onsemi

BC337
BC337

BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features These are Pb-Free Devices COLLECTOR 1 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 45 Vdc 3 EMITTER Collector - Base Voltage VCBO 50 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 800 mAdc Total Device Dissipation @ TA = 25C PD

1.12. sbc337.pdf Size:192K _auk

BC337
BC337

SBC337 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Switching application B Features • Suitable for AF-Driver stage and low E power output stages • Complementary pair with SBC327 TO-92 Ordering Information Type NO. Marking Package Code SBC337 SBC337 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rati

1.13. bc337~bc338.pdf Size:362K _secos

BC337
BC337

BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 2Base 2 2 2 J 3Emitter 3 3 3 CLASSIFICATION OF hFE A D Product-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank BC33

1.14. bc327_bc328_bc337_bc338.pdf Size:117K _cdil

BC337
BC337

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DE

1.15. bc337.pdf Size:338K _kec

BC337
BC337

SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). N DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00

1.16. bc337-338.pdf Size:172K _lge

BC337
BC337

BC337/338(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collecto

1.17. bc337_bc338.pdf Size:256K _wietron

BC337
BC337

BC337/BC338 NPN General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC337 BC338 Unit VCBO Collector-Base voltage 50 30 V VCEO V Collector-Emitter voltage 45 25 VEBO V Emitter-Base voltage 5.0 5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C

1.18. bc337m.pdf Size:808K _blue-rocket-elect

BC337
BC337

BC337M(BR3DG337M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 大电流,与 BC327M(BR3CG327M)互补。 High current, complementary pair with BC327M(BR3CG327M). 用途 / Applications 用于一般放大及开关线路。 General power amplifier and switching.

1.19. bc337_bc338.pdf Size:78K _first_silicon

BC337
BC337

SEMICONDUCTOR BC337/338 TECHNICAL DATA BC337/BC338 TRANSISTOR (NPN) B C FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 L 2.30 Symb

1.20. bc337.pdf Size:856K _kexin

BC337
BC337

DIP Type Transistors NPN Transistors BC337 (KC337) TO-92 Unit: mm +0.25 4.58 –0.15 ■ Features ● Collector Current Capability IC=0.5A 0.46 0.10 ● Collector Emitter Voltage VCEO=45V C ● Complement to BC327. +0.10 1.27TYP 1.27TYP 0.38 –0.05 1 2 3 B [1.27 0.20] [1.27 0.20] 3.60 0.20 E 1. Emitter 2. Base (R2.29) 3. Collector ■ Absolute Maximum Ratings Ta = 25℃

See also transistors datasheet: BC332 , BC332A , BC332B , BC332C , BC333 , BC334 , BC335 , BC336 , 2N2219 , BC337-01 , BC337-10 , BC337-16 , BC337-25 , BC337-40 , BC337A-16 , BC337A-25 , BC337AP .

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