BC550C Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC550C

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 420

Noise Figure, dB: -

Package of BC550C transistor: TO92

BC550C Equivalent Transistors - Cross-Reference Search

BC550C PDF document for downloads:

5.1. bc549_bc550.pdf Size:110K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC549B/D Low Noise Transistors NPN Silicon BC549B,C BC550B,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC549 BC550 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO 30 45 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 30 50 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 10

5.2. bc549_bc550.pdf Size:231K _philips

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC549; BC550 NPN general purpose transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 22 NXP Semiconductors Product data sheet NPN general purpose transistors BC549; BC550 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector • Low noise stages in audio frequency equipment. DESCRIPTION 1 handbook, halfpage 3 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complements: BC559 and BC560. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BC549C SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 BC550C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC549 - 30 V BC550 -

5.3. bc549_bc550_3.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector • Low noise stages in audio frequency equipment. 1 DESCRIPTION handbook, halfpage 3 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complements: BC559 and BC560. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC549 - 30 V BC550 - 50 V VCEO collector-emitter voltage open base BC549 - 30 V BC550 - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 100

5.4. bc546_bc547_bc548_bc549_bc550.pdf Size:44K _fairchild_semi

BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC546 80 V : BC547/550 50 V : BC548/549 30 V VCEO Collector-Emitter Voltage : BC546 65 V : BC547/550 45 V : BC548/549 30 V VEBO Emitter-Base Voltage : BC546/547 6 V : BC548/549/550 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sat)

5.5. bc549b-c_bc550b-c.pdf Size:52K _diodes

Low Noise Transistors BC549B,C NPN Silicon BC550B,C MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector–Emitter Voltage VCEO 30 45 Vdc Collector–Base Voltage VCBO 30 50 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100 mAdc 1 Total Device Dissipation @ TA = 25°C PD 625 mW 2 Derate above 25°C 5.0 mW/°C 3 Total Device Dissipation @ TC = 25°C PD 1.5 Watt CASE 29–04, STYLE 17 Derate above 25°C 12 mW/°C TO–92 (TO–226AA) Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit COLLECTOR 1 Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) BC549B,C 30 — — BC550B,C 45 — — Collector–Base Breakdown V

See also transistors datasheet: BC549B , BC549BP , BC549C , BC549CP , BC550 , BC550AP , BC550B , BC550BP , BC147 , BC550CP , BC551 , BC556 , BC556A , BC556AP , BC556B , BC556BP , BC556VI .

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